Semiconductor devices having a plurality of unit cell transistors that have smoothed turn-on behavior and improved linearity

ABSTRACT

A semiconductor device includes a plurality of unit cell transistors on a common semiconductor structure, the unit cell transistors electrically connected in parallel, and each unit cell transistor including a respective gate finger. Respective threshold voltages of first and second of the unit cell transistors differ by at least 0.1 volts and/or threshold voltages of first and second segments of a third of the unit cell transistors differ by at least 0.1 volts.

CROSS-REFERENCE TO RELATED APPLICATION

The present application claims priority under 35 U.S.C. § 120 as acontinuation-in-part of U.S. patent application Ser. No. 15/628,932,filed Jun. 21, 2017, the entire content of which is incorporated hereinby reference.

FIELD

The present invention described herein relates to microelectronicdevices and more particularly to high power field effect transistorshaving unit cell-based structures.

BACKGROUND

Electrical circuits requiring high power handling capability whileoperating at high frequencies, such as radio frequencies (500 MHz),S-band (3 GHz) and X-band (10 GHz), have in recent years become moreprevalent. Because of the increase in high power, high frequencycircuits, there has been a corresponding increase in demand forsemiconductor devices which are capable of reliably operating at radioand microwave frequencies while still being capable of handling highpower loads.

To provide increased output power, semiconductor devices have beendeveloped that include a plurality of “unit cell” transistors that areformed on a common semiconductor structure and that are electricallyconnected in parallel. Each unit cell transistor may include a gatefinger that extends in parallel between elongated source and draincontacts, as is schematically illustrated in FIG. 1.

In particular, FIG. 1 illustrates a metal layout of a conventionalsemiconductor device 10 that includes a gate pad 12, a source pad 22 anda drain pad 32 on a semiconductor structure 20. FIG. 1 is a plan view ofthe semiconductor device (i.e., looking down at the device from above)that illustrates various metal contact structures of the semiconductordevice 10 that are formed on the underlying semiconductor structure 20.As shown in FIG. 1, in the conventional semiconductor device 10, thegate pad 12 is connected by a gate bus 14 to a plurality of gate fingers16 that extend in parallel in a first direction (e.g., the y-directionindicated in FIG. 1). The drain pad 32 is connected to a plurality ofdrain contacts 36 via a drain bus 34. The source pad 22 is connected toa plurality of parallel source contacts 26 via a source bus 24 that isdisposed at a different metallization layer (here a higher metallizationlayer that runs above the gate fingers 16 and the drain contacts 36).Vertically-extending (i.e., extending in a z-direction that isperpendicular to the x-direction and the y-direction) source contactplugs 28 electrically connect each source contact 26 to the source bus24.

Each gate finger 16 runs along the y-direction between a pair ofadjacent source and drain contacts 26, 36. A unit cell transistor ofsemiconductor device 10 is illustrated at box 40, and includes a gatefinger 16 that extends between adjacent source and drain contacts 26,36. The “gate length” refers to the distance of the gate metallizationin the x-direction, while the “gate width” is the distance by which thegate fingers 16 and the source and drain contacts 26, 36 overlap in they-direction. That is, “width” of a gate finger 16 refers to thedimension of the gate finger 16 that extends in parallel to the adjacentsource/drain contacts 26, 36 (the distance along the y-direction). Thepower handling capability of the semiconductor device 10 may beproportional to its “gate periphery.” The gate periphery ofsemiconductor device 10 is the sum of the gate widths for each gatefinger 16 of the semiconductor device 10.

Semiconductor devices formed of wide band-gap semiconductor materialssuch as silicon carbide and/or gallium nitride based semiconductormaterials may operate at higher current densities and hence are widelyused in high power applications. In particular, gallium nitride basedtransistors that include one or more epitaxial layers of gallium nitridebased semiconductor materials such as GaN, AlGaN, InGaN, etc. are nowcommonly used in high power applications such as transistor RF poweramplifiers for wireless communications. The gallium nitride basedepitaxial layers included in these devices are typically grown onsilicon carbide or sapphire substrates. There is a need, however, forhigh power semiconductor devices that exhibit improved performance.

SUMMARY

Pursuant to embodiments of the present invention, semiconductor devicesare provided that include a plurality of unit cell transistors that areformed on a common semiconductor structure. The unit cell transistorsare electrically connected in parallel, and each unit cell transistorincludes a gate finger. In some embodiments, the respective thresholdvoltages of first and second of the unit cell transistors differ by atleast 0.1 volts and/or threshold voltages of first and second portionsof a third of the unit cell transistors differ by at least 0.1 volts.

In some embodiments, the gate fingers may extend in parallel to oneanother. The semiconductor structure includes a gallium nitride basedchannel layer.

In some embodiments, the threshold voltage of the first and second ofthe unit cell transistors may differ by at least 0.25 volts. In someembodiments, the threshold voltages of the first and second segments ofthe third of the unit cell transistors may differ by at least 0.25 voltsor by at least 0.5 volts. In some embodiments, the threshold voltage ofthe first and second of the unit cell transistors may differ by between0.1-1.25 volts. In some embodiments, the threshold voltages of the firstand second portions of the third of the unit cell transistors may differby between 0.1-1.25 volts.

In some embodiments, the unit cell transistors may be divided into aplurality of groups, each group including at least five unit celltransistors, where the threshold voltages of the unit cell transistorswithin each group are within 0.01 volts of each other. Each group mayinclude approximately the same number of unit cell transistors. Thenumber of groups may be two or three in example embodiments.

In some embodiments, each gate finger may include at least two segmentshaving threshold voltages that differ by at least 0.1 volts. In otherembodiments, each gate finger may include at least two segments havingthreshold voltages that differ by at least 0.25 volts or by at least 0.5volts. In still other embodiments, each gate finger may include at leasttwo segments having threshold voltages that differ by between 0.1-1.25volts.

In some embodiments, the semiconductor structure may include a galliumnitride based layer that acts as a barrier layer for each of the unitcell transistors, and a thickness of the gallium nitride based layer mayvary in different regions of the semiconductor device. For example, insome embodiments, the gallium nitride based layer may have a firstthickness underneath the first segment of the third of the unit celltransistors and may have a second, different thickness underneath thesecond segment of the third of the unit cell transistors. In otherembodiments, the gallium nitride based layer may have a first thicknessunderneath the first of the unit cell transistors and may have a secondthickness underneath the second of the unit cell transistors.

In some embodiments, a doping concentration of the portion of thechannel layer that is underneath a gate finger of the third of the unitcell transistors may vary along the width of the gate finger of thethird of the unit cell transistors.

In some embodiments, a first doping concentration of a first portion ofthe channel layer that is underneath a gate finger of the first of theunit cell transistors fingers may be different than a second dopingconcentration of a second portion of the channel layer that isunderneath a gate finger of the second of the unit cell transistors. Forexample, one may be doped and the other may be undoped.

In some embodiments, at least a portion of a gate finger of the first ofthe unit cell transistors may be a different material than at least aportion of a gate finger of a second of the unit cell transistors.

Pursuant to further embodiments of the present invention, semiconductordevices are provided that include a plurality of unit cell transistorsthat are formed on a semiconductor structure. The unit cell transistorsare electrically connected in parallel, and each unit cell transistorincluding a gate finger. Threshold voltages of at least a first subsetof the unit cell transistors vary along the width of the respective gatefingers of the unit cell transistors in the first subset of the unitcell transistors.

In some embodiments, the threshold voltages of the unit cell transistorsin the first subset of the unit cell transistors may vary by at least0.1 volts along the width of their respective gate fingers. In otherembodiments, the threshold voltages of the unit cell transistors in thefirst subset of the unit cell transistors may vary by at least 0.25volts (or by at least 0.5 volts) along the width of their respectivegate fingers. In still other embodiments, the threshold voltages of theunit cell transistors in the first subset of the unit cell transistorsmay vary by between 0.1-1.25 volts along the width of their respectivegate fingers.

In some embodiments, the gate fingers of the unit cell transistors mayextend in parallel to one another.

In some embodiments, the semiconductor structure may include a galliumnitride based channel layer.

In some embodiments, each gate finger may include at least threesegments that have different threshold voltages.

In some embodiments, the semiconductor device may include a galliumnitride based layer that acts as a barrier layer for each of the unitcell transistors. The gallium nitride based layer may have at least twodifferent thicknesses underneath at least half of the gate fingers.

In some embodiments, the semiconductor device may include a channellayer, and respective portions of the channel layer that are underneaththe gate fingers may have different doping concentrations underneath atleast two different portions of each of the respective gate fingers.

In some embodiments, each gate finger of the first subset of the unitcell transistors may have between two and five segments. A value of thethreshold voltage of each unit cell transistor in the first subset ofthe unit cell transistors may be substantially constant along eachsegment, while different segments may have threshold voltages that varyby at least 0.1 volts from at least one other segment.

Pursuant to still further embodiments of the present invention,semiconductor devices are provided that include a plurality of unit celltransistors that are formed on a semiconductor structure. The unit celltransistors are electrically connected in parallel, and each unit celltransistor including a gate finger. Each unit cell transistor in a firstsubset of the unit cell transistors may have a first threshold voltageand each unit cell transistor in a second subset of the unit celltransistors may have a second threshold voltage that differs from thefirst threshold voltage.

In some embodiments, the first threshold voltage may differ from thesecond threshold voltage by at least 0.1 volts.

In some embodiments, the gate fingers may extend in parallel to oneanother.

In some embodiments, the semiconductor structure may include a galliumnitride based channel layer.

In some embodiments, the first threshold voltage may differ from thesecond threshold voltage by at least 0.25 volts or by at least 0.5volts. In some embodiments, the first threshold voltage may differ fromthe second threshold voltage by between 0.1-1.25 volts.

In some embodiments, the first subset of the unit cell transistors andthe second subset of the unit cell transistors may each includeapproximately the same number of unit cell transistors.

In some embodiments, each unit cell transistor in a third subset of theunit cell transistors may have a third threshold voltage that differsfrom both the first threshold voltage and the second threshold voltage.

In some embodiments, the semiconductor structure may include a galliumnitride based layer that acts as a barrier layer of each of the unitcell transistors. A thickness of the gallium nitride based layer underthe gate fingers of each unit cell transistor in the first subset of theunit cell transistors may be different than a thickness of the barrierlayer under the gate fingers in each unit cell transistor in the secondsubset of the unit cell transistors.

In some embodiments, the semiconductor device may include a channellayer, and a first doping concentration of a first portion of thechannel layer that is underneath the gate fingers of the unit celltransistors in the first subset of the unit cell transistors may bedifferent from a second doping concentration of a second portion of thechannel layer that is underneath the gate fingers of the unit celltransistors in the second subset of the unit cell transistors.

Pursuant to still further embodiments of the present invention, a methodof increasing the linearity of a semiconductor device is provided inwhich a semiconductor device is formed that includes a plurality of unitcell transistors on a common semiconductor structure, the unit celltransistors electrically connected in parallel, and each unit celltransistor including a gate finger. One or more voltage signals areapplied to the gate fingers of the unit cell transistors in order toturn on different portions of the 2DEG channel of the semiconductordevice at respective different levels of current flow.

In some embodiments, first and second segments of at least some of thegate fingers may have threshold voltages that differ by at least 0.1volts. In other embodiments, these first and second segments may havethreshold voltages that differ by at least 0.25 volts.

In some embodiments, different ones of the unit cell transistors mayhave threshold voltages that differ by at least 0.1 volts. In otherembodiments, different ones of the unit cell transistors may havethreshold voltages that differ by at least 0.25 volts or by at least 0.5volts. In still other embodiments, different ones of the unit celltransistors may have threshold voltages that differ by between 0.1-1.25volts.

In some embodiments, each unit cell transistor has substantially thesame threshold voltage and the same structure. In these embodiments, afirst of the voltage signals may be applied to a first subset of thegate fingers of the unit cell transistors and a second of the voltagesignals that differs from the first voltage signal by at least 0.1 voltsmay be simultaneously applied to a second subset of the gate fingers ofthe unit cell transistors. In other embodiments, the first and second ofthe voltage signals may differ by at least 0.25 volts or be between0.1-1.25 volts.

In some embodiments, the unit cell transistors may be divided into aplurality of groups, each group including at least five unit celltransistors. The threshold voltages of the unit cell transistors withineach group may be within 0.01 volts of each other in some embodiments.Each group may include approximately the same number of unit celltransistors in some embodiments, and the number of groups may be two,three or more in various embodiments.

In some embodiments, the semiconductor structure may include a galliumnitride based channel layer and a gallium nitride based barrier layer onthe gallium nitride based channel layer, and the gate fingers may extendin parallel to one another. In such embodiments, a thickness of thegallium nitride based barrier layer may vary in different regions of thesemiconductor device. The gallium nitride based barrier layer may, forexample, have a first thickness underneath a first segment of a first ofthe unit cell transistors and a second, different thickness underneath asecond segment of the first of the unit cell transistors. Additionallyor alternatively, the gallium nitride based layer may have a firstthickness underneath a first subset of the unit cell transistors and asecond thickness underneath a second subset of the unit celltransistors.

Pursuant to still further embodiments of the present invention,semiconductor devices are provided that include a plurality of unit celltransistors on a semiconductor structure. The unit cell transistors areelectrically connected in parallel, and each unit cell transistorincluding a gate finger that extends above a gallium nitride basedbarrier layer of the semiconductor structure. A thickness of the galliumnitride based barrier layer is different in different locations withinthe semiconductor device.

In some embodiments, the gallium nitride based barrier layer may have afirst thickness underneath respective first segments of the gate fingersof a first subset of the unit cell transistors and a second, differentthickness underneath respective second segments of the gate fingers ofthe first subset of the unit cell transistors. The first and secondthicknesses may differ, for example, by at least 1 nm.

In some embodiments, the gallium nitride based barrier layer may have afirst thickness underneath a first subset of the unit cell transistorsand a second thickness underneath a second subset of the unit celltransistors. The first and second thicknesses may differ, for example,by at least 1 nm.

In some embodiments, different subsets of the unit cell transistors mayhave threshold voltages that differ by at least 0.1 volts or by at least0.25 volts or by at least 0.5 volts.

In some embodiments, different segments of at least one of the gatefingers may have threshold voltages that differ by at least 0.1 volts orby at least 0.25 volts or by at least 0.5 volts.

Pursuant to still further embodiments of the present invention,semiconductor devices are provided that include a plurality of unit celltransistors on a semiconductor structure that includes a gallium nitridebased barrier layer. The unit cell transistors are electricallyconnected in parallel, and each unit cell transistor including a gatefinger that extends above the gallium nitride based barrier layer. Thesedevices further include a voltage divider that has a first output thatis coupled to the gate fingers of a first subset of the unit celltransistors and a second output that is coupled to the gate fingers of asecond subset of the unit cell transistors. The first and second outputsare configured to apply respective first and second voltages to the gatefingers of the respective first and second subsets of the unit celltransistors, where the first and second voltages differ by at least 0.1volts.

In some embodiments, the unit cell transistors of the first and secondsubsets of unit cell transistors may have identical designs.

In some embodiments, the first and second voltages may differ by atleast 0.25 volts.

In some embodiments, the voltage divider may include a third output thatis coupled to the gate fingers of a third subset of the unit celltransistors, where the third output is configured to apply a thirdvoltage to the gate fingers of the third subset of the unit celltransistors, the third voltage differing from both the first and secondvoltages by at least 0.1 volts (or by at least 0.25 volts or 0.5 voltsin other embodiments).

Pursuant to additional embodiments of the present invention, RF poweramplifiers are provided that include a plurality of unit celltransistors on a common wide bandgap semiconductor structure. The unitcell transistors are electrically connected in parallel, and each unitcell transistor includes a respective gate finger. The unit celltransistors are configured so that a third order transconductanceresponse of the RF power amplifier includes at least three peaks. Thepeaks may comprise, for example, at least two positive peaks and a leastone negative peak or at least one positive peak and at least twonegative peaks. In some embodiments, the third order transconductanceresponse of the RF power amplifier includes at least two positive peaksand the at least two negative peaks. These peaks may all be atgate-to-source voltage values that are within a turn-on region for thegate-to-source voltage. The positive peaks in the third ordertransconductance response that are associated with higher thresholdvoltage values may be larger than the respective positive peaks in thethird order transconductance response that are associated with lowerthreshold voltage values in some embodiments. The negative peaks in thethird order transconductance response that are associated with higherthreshold voltage values may be larger (i.e., more negative) than therespective negative peaks in the third order transconductance responsethat are associated with lower threshold voltage values in someembodiments.

In some embodiments, a first portion of the RF power amplifier may havea first threshold voltage and a second portion of the RF power amplifiermay have a second threshold voltage, where the first and secondthreshold voltages differ by at least 0.25 volts. In other embodiments,the difference in the first and second threshold voltages may be atleast 0.5 volts, at least 0.75 volts, or at least 1.0 volts

In some embodiments, the first portion may comprise a first percentageof a gate periphery of the RF power amplifier and the second portion maycomprise a second percentage of the gate periphery of the RF poweramplifier, and the second percentage may exceed the first percentage byat least five percentage points. For example, in one specificembodiment, the first percentage may be no more than 45% of the gateperiphery and the second percentage may be at least 55% of the gateperiphery. In some embodiments, the first threshold voltage may be lessthan the second threshold voltage.

In some embodiments, the RF power amplifier may be a gallium nitridebased high electron mobility transistor (“HEMT”) RF power amplifier. TheHEMT RF power amplifier may include a gallium nitride based channellayer and a gallium nitride based barrier layer on the channel layer,the barrier layer having a higher band-gap than the channel layer. Thechannel layer and the barrier layer may be part of the common widebandgap semiconductor structure. In some embodiments, the thickness ofthe gallium nitride based barrier layer may differ underneath differentportions of the gate fingers. For example, a first portion of the gateperiphery may be on top of portions of the barrier layer that have afirst thickness and a second portion of the gate periphery may be on topof portions of the barrier layer that have a second thickness, where thefirst and second thicknesses differ by at least 5 nanometers. In otherembodiments, the first and second thicknesses may differ by at least 7.5nanometers or by at least 10 nanometers.

In some embodiments, a threshold voltage of a first segment of a firstof the gate fingers may exceed a threshold voltage of a second segmentof the first of the gate fingers by at least 0.25 volts.

Pursuant to further embodiments of the present invention, RF poweramplifiers are provided that include a plurality of unit celltransistors on a common wide bandgap semiconductor structure. The unitcell transistors are electrically connected in parallel, and each unitcell transistor includes a respective gate finger. A gate periphery ofthe RF power amplifier includes a first portion and a second portion,and the first portion has a first threshold voltage and the secondportion has a second threshold voltage that differs from the firstthreshold voltage by at least 0.1 volts. The first portion comprises afirst percentage of the gate periphery and the second portion comprisesa second percentage of the gate periphery that exceeds the firstpercentage by at least five (5) percentage points.

In some embodiments, the first and second threshold voltages may differby at least 0.25 volts, at least 0.5 volts, at least 0.75 volts or by atleast 1.0 volts.

In some embodiments, the first percentage may be no more than 45% of thegate periphery and the second percentage may be at least 55% of the gateperiphery.

In some embodiments, the first threshold voltage may be less than thesecond threshold voltage.

In some embodiments, the RF power amplifier may be a gallium nitridebased RF power amplifier. For example, in some embodiments, the RF poweramplifier may be a gallium nitride based high electron mobilitytransistor RF power amplifier having a gallium nitride based channellayer and a gallium nitride based barrier layer. The gallium nitridebased barrier layer may have a first thickness underneath a firstportion of the gate periphery and a second thickness underneath a secondportion of the gate periphery, where the first and second thicknessesdiffer by at least 5 nanometers.

In some embodiments, a gate periphery of the RF power amplifier mayfurther include a third portion that has a third threshold voltage thatdiffers from both the first threshold voltage and the second thresholdvoltage by at least 0.1 volts, at least 0.5 volts, at least 0.75 voltsor by at least 1.0 volts.

Pursuant to yet additional embodiments of the present invention, galliumnitride based RF power amplifiers are provided that may exhibit asignificant reduction in soft compression behavior as compared toconventional gallium nitride based RF power amplifiers. These RF poweramplifiers may include a plurality of unit cell gallium nitride basedhigh electron mobility transistors that are on a common semiconductorstructure and that are electrically connected in parallel, and each unitcell gallium nitride based high electron mobility transistor including arespective gate finger. The unit cell gallium nitride based highelectron mobility transistors are configured so that the RF poweramplifier exhibits gain compression of less than 0.5 dB for RF signalshaving input power levels of between 20 dB and 11 dB back-off from thesaturation power (i.e., the input power level corresponding to themaximum output power level) and gain compression of less than 1.0 dB forRF signals having input power levels of between 11 dB and 6 dB back-offfrom the saturation power, when the RF power amplifier is operated at adrain to source current level of greater than 50 mA/mm.

Pursuant to still further embodiments of the present invention, methodsof improving the linearity of an RF power amplifier are provided. The RFpower amplifier may include a plurality of unit cell transistors thatare electrically connected in parallel on a common wide bandgapsemiconductor structure. Pursuant to these methods, a common gate signalhaving an increasing voltage level is applied to the respective gatefingers of the unit cell transistors so as to increase thegate-to-source capacitance of the RF power amplifier to a first level.Then, the voltage level of the common gate signal that is applied to therespective gate fingers of the unit cell transistors is furtherincreased while maintaining the gate-to-source capacitance of the RFpower amplifier substantially at the first level. Then, the voltagelevel of the common gate signal that is applied to the respective gatefingers of the unit cell transistors is increased even further so as toincrease the gate-to-source capacitance of the RF power amplifier to asecond level that is at least 1.5 times larger than the first level.

In some embodiments, a first portion of a gate periphery of the RF poweramplifier may have a first threshold voltage and a second portion of thegate periphery of the RF power amplifier may have a second thresholdvoltage, the first and second threshold voltages differing by at least0.25 volts.

In some embodiments, the first portion may be a first percentage of thegate periphery and the second portion may be a second percentage of thegate periphery, and the second percentage may exceed the firstpercentage by at least five percentage points. For example, the firstpercentage may be no more than 45% of the gate periphery and the secondpercentage may be at least 55% of the gate periphery in one specificembodiment. In some embodiments, the first threshold voltage may be lessthan the second threshold voltage.

In some embodiments, the RF power amplifier may be a gallium nitridebased high electron mobility transistor RF power amplifier.

In some embodiments, the gate fingers may be on a top surface of agallium nitride based barrier layer that has a first thicknessunderneath a first portion of the gate periphery and a second thicknessunderneath a second portion of the gate periphery, where the first andsecond thicknesses differ by at least 5 nanometers.

In some embodiments, a threshold voltage of a first segment of a firstof the gate fingers may exceed a threshold voltage of a second segmentof the first of the gate fingers by at least 0.25 volts.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a plan view of a metal layout of a conventional multi-cellsemiconductor device.

FIG. 2 is a graph illustrating the transconductance and the third ordertransconductance as a function of the applied threshold voltage for aconventional semiconductor device with unit gate fingers having widthsof 125 microns.

FIG. 3 is a schematic graph illustrating the threshold voltage variationin the conventional multi-cell semiconductor device of FIG. 1.

FIGS. 4A-4C are schematic graphs illustrating the threshold voltagevariation in multi-cell semiconductor devices according to certainembodiments of the present invention.

FIGS. 5A-5C are schematic plan views of multi-cell semiconductor devicesaccording to embodiments of the present invention that have gate fingershaving different threshold voltages.

FIGS. 6A and 6B are schematic plan views of multi-cell semiconductordevices according to embodiments of the present invention that havethreshold voltages that vary discretely along the width of the gatefingers thereof, with the total width of each gate finger being 125microns.

FIGS. 7A-7B are graphs illustrating the transconductance and the thirdorder transconductance as a function of the applied threshold voltagefor semiconductor devices having the designs of FIGS. 6A-6B,respectively.

FIG. 8A is a cross-sectional view taken along line 8A-8A of FIG. 6A.

FIG. 8B is a cross-sectional view taken along line 8B-8B of FIG. 6A.

FIG. 9 is a schematic plan view of a multi-cell semiconductor deviceaccording to further embodiments of the present invention.

FIGS. 10A-10C are schematic graphs illustrating the threshold voltagevariation in multi-cell transistors according to further embodiments ofthe present invention.

FIGS. 11A-11C are schematic cross-sectional views of multi-cellsemiconductor devices according to further embodiments of the presentinvention.

FIG. 12 is a schematic plan view of a semiconductor wafer having aplurality of semiconductor devices according to embodiments of thepresent invention formed thereon.

FIG. 13 is a circuit diagram of a multi-cell semiconductor deviceaccording to some embodiments of the present invention.

FIG. 14 is a circuit diagram of a multi-cell semiconductor deviceaccording to further embodiments of the present invention.

FIG. 15 is a graph illustrating the transconductance and the third ordertransconductance as a function of the applied threshold voltage for asemiconductor device having the design of FIG. 14 and gate fingershaving a total width of 125 microns.

FIG. 16 is a schematic circuit diagram of a semiconductor deviceaccording to embodiments of the present invention that includes anon-wafer voltage divider.

FIG. 17 is a schematic circuit diagram of a semiconductor deviceaccording to further embodiments of the present invention that includesa voltage divider that is partially implemented on-wafer.

FIG. 18A is a schematic plan view of a multi-cell semiconductor devicein the form of an RF power amplifier according to further embodiments ofthe present invention.

FIG. 18B is a cross-sectional view taken along line 18B-18B of FIG. 18A.

FIG. 19A is a graph that illustrates the measured transconductance atdevice turn-on for a direct current signal for four RF power amplifiersaccording to embodiments of the present invention as compared to thetransconductance at device turn-on for a conventional RF poweramplifier.

FIG. 19B is a graph that illustrates the measured transconductance atdevice turn-on for an RF signal for the four RF power amplifiers thatwere used to generate the graph of FIG. 19A as compared to thetransconductance at device turn-on for the conventional RF poweramplifier.

FIG. 20 is a graph of the measured gate-to-source capacitance at deviceturn-on for several RF power amplifiers according to embodiments of thepresent invention as compared to the gate-to-source capacitance atdevice turn-on for a conventional RF power amplifier.

FIG. 21 is a graph of the gain response curves for four RF poweramplifiers according to embodiments of the present invention.

FIG. 22 is a graph illustrating how the percentage of the gate peripherythat is recessed impacts the gain performance of the RF power amplifiersaccording to embodiments of the present invention.

FIG. 23A is a graph illustrating the gain performance of a conventionalRF power amplifier over a range of different bias current levels.

FIG. 23B is a graph illustrating the gain performance of an RF poweramplifier according to embodiments of the present invention over a rangeof different bias current levels.

FIG. 24 is a graph illustrating the gain performance of an RF poweramplifier according to an embodiment of the present invention ascompared to a conventional RF power amplifier.

FIG. 25 is a graph that illustrates the measured maximum available gainas a function of frequency for four RF power amplifiers according toembodiments of the present invention as compared to a conventional RFpower amplifier.

DETAILED DESCRIPTION

Embodiments of the present invention provide multi-cell semiconductordevices (i.e., a semiconductor device that includes a plurality of unitcell transistors) that may exhibit improved linearity. One commonmeasure of the linearity of a multi-cell semiconductor device is thethird order transconductance behavior of the device. Because multi-cellsemiconductor devices formed in gallium nitride and various other widebandgap semiconductor material systems may exhibit sharp turn-onbehavior, multi-cell semiconductor devices formed in these materialsystems may exhibit significant variance in their third ordertransconductance response at device turn-on. Non-linearities in thethird order transconductance may generate third order intermodulationproducts in the output signal of the transistor. If these third orderintermodulation products fall within a channel of a communicationssystem that includes the multi-cell semiconductor device, the thirdorder intermodulation products may degrade the performance of thecommunications system. The third order transconductance at deviceturn-on is often the primary parameter contributing to third orderintermodulation products in a multi-cell semiconductor device. The peakthird order transconductance value increases proportionally with thesize of the device. Thus, as applications require larger, higher powersemiconductor devices, it may become increasingly difficult to provide ahigh degree of linearity.

Pursuant to embodiments of the present invention, multi-cellsemiconductor devices are provided that may exhibit significantlyimproved linearity. This improved linearity may be achieved byengineering the threshold voltage of the device to provide the improvedlinearity, or by applying different gate voltages to different portionsof the device. The semiconductor devices according to embodiments of thepresent invention may, in some embodiments, be high power devices thatinclude a plurality of unit cells that are electrically connected inparallel. Each unit cell may include a gate finger, and the gate fingersmay extend in parallel to each other. The multi-cell semiconductordevices may be gallium nitride based devices in some embodiments. Forexample, the devices may be gallium nitride based HEMT RF poweramplifiers.

The threshold voltage of a field effect transistor refers to the minimumgate-to-source voltage differential that is needed to allow current topass between the source and drain terminals of the transistor. Themulti-cell semiconductor devices according to embodiments of the presentinvention may have a variable threshold voltage that is different indifferent locations within the device. In some embodiments, distinctsubsets of the gate fingers may have different threshold voltages. Inother embodiments, the threshold voltage may vary along the widths ofthe respective gate fingers. In still other embodiments, the above twoapproaches can be combined. By designing the semiconductor devices tohave different threshold voltages in different regions of the device,different portions of the 2DEG channel of the semiconductor device mayturn on at different degrees in response to application of a gatevoltage. In other words, different portions of the 2DEG channel of thesemiconductor device may turn on at different levels of current flow.For example, in some embodiments, different portions of the 2DEG channelof the semiconductor device may have levels of current flow that differby at least 5%. In other embodiments, different portions of the 2DEGchannel of the semiconductor device may have levels of current flow thatdiffer by at least 10%. In still other embodiments, different portionsof the 2DEG channel of the semiconductor device may have levels ofcurrent flow that differ by between 10%-30%. As discussed above,semiconductor devices formed in wide band-gap semiconductor materialsystems such as, for example, gallium nitride based semiconductors, mayexhibit fast turn-on behavior where all of the unit cells turn onessentially simultaneously. Since the third order transconductance tendsto peak at turn-on, multi-cell semiconductor devices formed in suchmaterial systems may experience a large spike in the third ordertransconductance at device turn-on, since all of the unit cells turn onsimultaneously. By varying the threshold voltage so that differentportions of the device have different threshold voltages, the degree towhich the channel is turned on at any given time will vary across thedevice, reducing the magnitude of the spike in the third ordertransconductance.

In some embodiments, the semiconductor devices may be high electronmobility transistors (“HEMT”) that include a channel layer and a barrierlayer. In such devices, the threshold voltage may be varied in differentregions of the device by varying the thickness of the barrier layer. Inother embodiments, the doping concentration of the barrier layer and/orthe channel layer may be varied in different portions of the device tovary the threshold voltage. In still other embodiments, the compositionof the gate fingers may be varied, either along the width of the gatefinger and/or between different gate fingers. For example, differentmetals may be used and/or metal alloys having different compositions inorder to vary the threshold voltage.

In still other embodiments, multi-cell semiconductor devices areprovided that may include an associated voltage divider circuit that maybe configured to provide different gate voltages to different unit cellsof the device. These devices may have unit cells that have the samestructure and configuration. However, by applying different gatevoltages to different subsets of the gate fingers, different unit celltransistors can be configured to turn on at different degrees (i.e., atdifferent levels of current flow) in order to smooth out the peak in thethird order transconductance.

The semiconductor devices according to embodiments of the presentinvention may exhibit significantly improved linearity. For example, ifthe semiconductor device is divided into two regions having differentthreshold voltage values, the peak third order transconductance valuemay be reduced on the order of 30% as compared to a device havinguniform threshold voltages throughout. If the semiconductor device isdivided into three regions having different threshold voltage values,the peak third order transconductance value may be reduced on the orderof 65% as compared to a device having uniform threshold voltagesthroughout. In semiconductor devices having greater variation in thethreshold voltage (e.g., four or more different threshold voltagelevels), further reduction of the third order transconductance may beachieved. These improvements in linearity may be achieved with littleimpact on the other operating characteristics of the device such as, forexample, the gain of the device.

In some example embodiments, semiconductor devices are provided thatinclude a plurality of unit cell transistors that are formed on a commonwide bandgap semiconductor structure. The unit cell transistors areelectrically connected in parallel, and each unit cell transistorincludes a respective gate finger. The threshold voltages of first andsecond subsets of the unit cell transistors are designed to differ by,for example, at least 0.1 volts in some embodiments. In otherembodiments, this difference may be at least 0.25 volts. In furtherembodiments, this difference may be at least 0.5 volts. In still otherembodiments, the difference may be between 0.1-1.25 volts.

In other example embodiments, semiconductor devices are provided thatinclude a plurality of unit cell transistors that are formed on a commonwide bandgap semiconductor structure. The unit cell transistors areelectrically connected in parallel, and each unit cell transistorincludes a respective gate finger. The threshold voltages of first andsecond segments of at least some of the unit cell transistors aredesigned to differ by, for example, at least 0.1 volts in someembodiments. In other embodiments, this difference may be at least 0.25volts or at least 0.5 volts. In still other embodiments, the differencemay be between 0.1-1.25 volts.

In still further example embodiments, semiconductor devices are providedthat include a plurality of unit cell transistors on a common widebandgap semiconductor structure. The unit cell transistors areelectrically connected in parallel, and each unit cell transistorincludes a gate finger that extends above a gallium nitride basedbarrier layer of the semiconductor structure. A thickness of the galliumnitride based barrier layer is different in different locations withinthe semiconductor device in order to vary the threshold voltagethroughout the semiconductor device.

In yet additional example embodiments, semiconductor devices areprovided that include a plurality of unit cell transistors on asemiconductor structure. The unit cell transistors are electricallyconnected in parallel, and each unit cell transistor includes a gatefinger that extends above a gallium nitride based barrier layer of thesemiconductor structure. The semiconductor devices include a voltagedivider that has a first output that is coupled to the gate fingers of afirst subset of the unit cell transistors and a second output that iscoupled to the gate fingers of a second subset of the unit celltransistors. The first and second outputs are configured to apply firstand second voltages to the gate fingers of the first and second subsetsof the unit cell transistors, respectively, where the first and secondvoltages differ by, for example, at least 0.1 volts or by at least 0.25volts in other embodiments.

Methods of increasing the linearity of a semiconductor device are alsoprovided. Pursuant to these methods, a semiconductor device is formedthat includes a plurality of unit cell transistors on a commonsemiconductor structure. The unit cell transistors are electricallyconnected in parallel, and each unit cell transistor includes a gatefinger. One or more voltage signals are applied to the gate fingers ofthe unit cell transistors in order to turn on between two and tendifferent portions of the semiconductor device at respective differentdegrees.

In still other example embodiments, RF power amplifiers are providedthat include a plurality of unit cell transistors on a common widebandgap semiconductor structure such as a gallium nitride basedsemiconductor structure. The unit cell transistors are electricallyconnected in parallel, and each unit cell transistor includes arespective gate finger. The unit cell transistors are configured so thata third order transconductance response of the RF power amplifierincludes at least three peaks. The at least three peaks may comprise,for example, at least two positive peaks and at least one two negativepeak, at least one positive peak and at least two negative peaks, or atleast two positive peaks and at least two negative peaks in exampleembodiments. Both the positive peaks and the negative peaks in the thirdorder transconductance response may be less pronounced (i.e., lowerpositive peaks and less negative negative peaks) than the peaks in thethird order transconductance response of a comparable conventional RFpower amplifier. Moreover, the peaks in the third order transconductancein the RF power amplifiers according to embodiments of the presentinvention may be spread out over a wider range of gate-to-sourcevoltages. Since the variation in the third order transconductanceresponse is both reduced in magnitude and spread out over a larger rangeof gate-to-source voltage values, non-linearities in the gain responseof the RF power amplifier may be reduced, and soft gain compressioneffects that are present in comparable conventional RF power amplifiersmay be significantly reduced or even eliminated. As a result, the inputpower level required to reach point where 1 dB and/or 3 dB gaincompression occurs may be pushed out to higher input power levels ascompared to comparable conventional RF power amplifiers when the RFpower amplifier is operated at higher bias current levels.

In yet still further embodiments, the percentage of the device that hasa first threshold voltage may be different than the percentage of thedevice that has a second, different threshold voltage. For example, insome embodiments, the RF power amplifier may be configured so that afirst percentage of the gate periphery has a first threshold voltage anda second percentage of the gate periphery has a different, secondthreshold voltage. The second percentage may exceed the first percentageby at least five percentage points in some embodiments, by at least 10percentage points in other embodiments, by at least 15 percentage pointsin still further embodiments, and by at least 20 percentage points inyet additional embodiments. For example, in one embodiment, the firstpercentage may be between 35-45% of the gate periphery and the secondpercentage may be between 55-65% of the gate periphery. The firstthreshold voltage may be less than the second threshold voltage.

According to still further embodiments of the present invention, galliumnitride based RF power amplifiers are provided that include a pluralityof unit cell gallium nitride based high electron mobility transistors ona common semiconductor structure that are configured so that the RFpower amplifier exhibits gain compression of less than 0.5 dB for RFsignals having input power levels of between 20 dB and 11 dB back-offfrom the saturation power and gain compression of less than 1.0 dB forRF signals having input power levels of between 11 dB and 6 dB back-offfrom the saturation power, when the RF power amplifier is operated at adrain to source current level of greater than 50 mA/mm.

Embodiments of the present invention will now be described in greaterdetail with reference to FIGS. 2-25.

FIG. 2 is a graph illustrating the transconductance (gm) and the thirdorder transconductance (gm3) as a function of the gate-to-source voltagedifferential for a conventional gallium nitride based multi-cellsemiconductor device, such as the semiconductor device 10 of FIG. 1. Asshown in FIG. 2, the third order transconductance has a high positivepeak followed by a high negative peak and then tends to smooth out asthe applied gate voltage increases from device turn-on to saturation.Due to the sharp turn-on behavior of gallium nitride based transistors,an absolute value of the third order transconductance reaches a maximumvalue near pinch off, which refers to the drain to source voltage levelafter which the drain to source current becomes almost constant (i.e.,where the transistor enters into the saturation region). As can be seenin FIG. 2, the third order transconductance peaks at a value of −70.2mS/V. As noted above, non-linearities in the third ordertransconductance may generate third order intermodulation products inthe output signal of the device that may degrade the performance of acommunications system that includes the device. Consequently, allowablevalues for third order transconductance are often specified forapplications such as various wireless communications applications, andthe semiconductor devices suitable for operation in such systems musthave peak third order transconductance values that are less than thespecified values.

FIG. 3 is a graph illustrating the threshold voltage variation in aconventional multi-cell semiconductor device having the design of thesemiconductor device 10 of FIG. 1.

Referring to FIG. 3, the vertical axis represents the threshold voltage(i.e., the gate-to-source voltage differential at which the unit celltransistors turn on), while the horizontal axis denotes the gate fingersincluded in the conventional semiconductor device 10, arranged in theirorder across the device (i.e., arranged in the x-axis direction of FIG.1). In other words, the left portion of the horizontal axis of FIG. 3corresponds to the gate fingers 16 on the left side of the semiconductordevice 10 of FIG. 1 while the right portion of the horizontal axis ofFIG. 3 corresponds to the gate fingers 16 on the right side of thesemiconductor device 10 of FIG. 1. Thus, FIG. 3 shows the thresholdvoltage for each of the unit cell transistors of the semiconductordevice 10. As shown in FIG. 3, in the conventional semiconductor device10, all of the unit cell transistors 40 have the same threshold voltagevalue V_(TH-C). It should also be noted that in the conventionalsemiconductor device 10, the threshold voltage value V_(TH-C) isconstant along the width of each gate finger 16.

FIGS. 4A-4C are graphs illustrating the threshold voltage variation inmulti-cell semiconductor devices according to certain embodiments of thepresent invention. As with FIG. 3, in FIGS. 4A-4C the horizontal axisdenotes the locations of the gate fingers within the transistor alongthe direction of the x-axis of FIG. 1 (as well as the x-axis directionof FIGS. 5A-5C, which are discussed below), while the vertical axisrepresents the threshold voltage for the unit cell transistorscorresponding to each respective gate finger.

As shown in FIG. 4A, in a first example embodiment, a first subset ofthe unit cell transistors are designed to have a first threshold voltagevalue V_(TH-1) and a second subset of the unit cell transistors aredesigned to have a second threshold voltage value V_(TH-2) that isgreater than the first threshold voltage value V_(TH-1). The firstthreshold voltage value V_(TH-1) may, for example, be lower thanV_(TH-C) while the second threshold voltage value V_(TH-2) may, forexample, be higher than V_(TH-C). In example embodiments,V_(TH-2)−V_(TH-1) may be between 0.1 and 0.8 volts, although embodimentsof the present invention are not limited thereto.

Referring next to FIG. 4B, in a second example embodiment, a firstsubset of the unit cell transistors are designed to have a firstthreshold voltage value V_(TH-1), a second subset of the unit celltransistors are designed to have a second threshold voltage valueV_(TH-2) that is greater than the first second threshold voltage valueV_(TH-1), and a third subset of the unit cell transistors are designedto have a third threshold voltage value V_(TH-3) that is greater thanthe second threshold voltage value V_(TH-2). The first threshold voltagevalue V_(TH-1) may, for example, be lower than V_(TH-C), the secondthreshold voltage value V_(TH-2) may, for example, be approximatelyequal to V_(TH-C), and the third threshold voltage value V_(TH-3) may,for example, be higher than V_(TH-C). In example embodiments,V_(TH-3)−V_(TH-1) may be between 0.1 and 0.8 volts, although embodimentsof the present invention are not limited thereto. By adding a thirddiscrete threshold voltage value V_(TH-3), the peak value of the thirdorder transconductance at device turn-on may be further reduced byspreading out (smoothing) the device turn-on over a larger range ofapplied gate voltages.

Referring next to FIG. 4C, in a third example embodiment, each unit celltransistor may have a different threshold voltage value. In particular,the semiconductor device corresponding to FIG. 4C has unit celltransistors having steadily increasing threshold voltage values. Thus,for a semiconductor device having N unit cell transistors, the thresholdvoltage values may range from V_(TH-1) to V_(TH-N). The thresholdvoltage value V_(TH-N/2) of the center unit cell transistor may, forexample, be approximately equal to V_(TH-C). The design corresponding toFIG. 4C may further spread out when different portions of the deviceturn on in response to application of a turn-on voltage to a gate pad ofthe device. The design of the semiconductor device corresponding to FIG.4C may further reduce the peak value of the third order transconductanceat device turn-on.

While FIGS. 4A-4C illustrate that the threshold voltage increases(either continuously or in discrete groups) with increasing unit celltransistor (or equivalently, gate finger position) as you move from leftto right across the device (or alternatively, from right to left), itwill be appreciated that this need not be the case. For example, FIGS.10A-10C (discussed in detail below) illustrate additional exampleembodiments in which the threshold voltages for different sets of unitcell transistors are more randomly distributed throughout the device.

FIGS. 5A-5C are plan views of the metal layouts of three examplemulti-cell semiconductor devices according to certain embodiments of thepresent invention. The semiconductor devices of FIGS. 5A-5C correspondto the devices discussed above with reference to FIGS. 4A-4C,respectively.

As shown in FIG. 5A, a multi-cell semiconductor device 100 includesvarious metal patterns that are formed on a semiconductor structure 120.An example composition of the semiconductor structure 120 will bediscussed in greater detail below with reference to FIGS. 8A and 8B. Asshown in FIG. 5A, the multi-cell semiconductor device 100 includes agate pad 112, a source pad 122 and a drain pad 132 that are formed onthe semiconductor structure 120. The gate pad 112 is connected by a gatebus 114 to a plurality of gate fingers 116 that extend in parallel in afirst direction (the y-direction). The drain pad 132 is connected to aplurality of parallel drain contacts 136 via a drain bus 134. The sourcepad 122 is connected to a plurality of parallel source contacts 126 viaa source bus 124 that may be disposed, for example, at a differentmetallization layer than the gate bus 114 and the drain bus 134. Thesource bus 124 in the depicted embodiment runs above the gate fingers116 and the drain contacts 136. Vertically-extending source contactplugs 128 electrically connect each source contact 126 to the source bus124. Each gate finger 116 runs along the y-direction between a pair ofadjacent source and drain contacts 126, 136. A unit cell of thetransistor 100 is illustrated at box 140, and includes a gate finger 116that extends between adjacent source and drain contacts 126, 136.

As is further shown in FIG. 5A, the gate fingers 116 may include firstgate fingers 116 a and second gate fingers 116 b. The gate fingers 116 amay be in a first region 102 ₁ of the semiconductor structure 120, andthe gate fingers 116 b may be in a second region 102 ₂ of thesemiconductor structure 120. In the first region 102 ₁, the unit celltransistors 140 (i.e., the unit cell transistors that include the gatefingers 116 a) may each have a first threshold voltage value V_(TH-1)along the width of each gate finger 116 a. In the second region 102 ₂,the unit cell transistors 140 (i.e., the unit cell transistors thatinclude the gate fingers 116 b) may each have a second threshold voltagevalue V_(TH-2) along the width of each gate finger 116 b. The secondthreshold voltage value V_(TH-2) may be greater than the first thresholdvoltage value V_(TH-1). As will be discussed below, the unit celltransistors in the first and second regions 102 ₁ and 102 ₂ may be madeto have different threshold voltage values in a variety of waysincluding using different materials to form the gate fingers or changingthe composition, doping concentration and/or thickness of one or morelayers that underlie the gate fingers. For ease of description the gatefingers 116 a of unit cell transistors having the first thresholdvoltage value V_(TH-1) are shown using a first form of cross-hatching inFIG. 5A while the gate fingers 116 b of unit cell transistors having thesecond threshold voltage value V_(TH-2) are shown using a second form ofcross-hatching. This same convention is also used in the figuresdepicting additional embodiments of the present invention. It will beappreciated, however, that depending upon the technique used to providedifferent threshold voltage values the gate fingers (e.g., gate fingers116 a and 116 b) may or may not have the same composition.

In some embodiments, V_(TH-2)−V_(TH-1) may be at least 0.1 volts. Inother embodiments, V_(TH-2)−V_(TH-1) may be at least 0.25 volts. Instill other embodiments, V_(TH-2) V_(TH-1) may be at least 0.5 volts. Instill other embodiments, V_(TH-2)−V_(TH-1) may be at least 0.05 volts orbe between 0.1-1.25 volts. In contrast, the unit cell transistors thatare within a given region (e.g., the first region 102 ₁) may each havesubstantially the same threshold voltage. For example, the unit celltransistors within each region may have threshold voltages that arewithin 0.025 volts of each other in some embodiments. In otherembodiments, the unit cell transistors within each region may havethreshold voltages that are within 0.01 volts of each other.

As shown in FIG. 5B, a multi-cell semiconductor device 200 according tofurther embodiments of the present invention may be similar to thesemiconductor device 100 discussed above with reference to FIG. 5A,except that the semiconductor device 200 is divided into three regions202 ₁, 202 ₂, 202 ₃ instead of two regions as in the case ofsemiconductor device 100. In the first region 202 ₁, unit celltransistors having gate fingers 216 a may be disposed that each have afirst threshold voltage value V_(TH-1) along the width of each gatefinger 216 a. In the second region 202 ₂, unit cell transistors havinggate fingers 216 b may be disposed that each have a second thresholdvoltage value V_(TH-2) along the width of each gate finger 216 b, wherethe second threshold voltage value V_(TH-2) is greater than the firstthreshold voltage value V_(TH-1). In the third region 202 ₃, unit celltransistors having gate fingers 216 c may be disposed that each have athird threshold voltage value V_(TH-3) along the width of each gatefinger 216 c, where the third threshold voltage value V_(TH-3) isgreater than the second threshold voltage value V_(TH-2). Elements ofsemiconductor device 200 that are the same as the corresponding elementsof semiconductor device 100 are identified by the same referencenumerals and further description of these elements is omitted.

As shown in FIG. 5C, a multi-cell semiconductor device 300 according tostill further embodiments of the present invention may be similar to thesemiconductor device 100, 200 that are discussed above, except that thesemiconductor device 300 is divided into N regions 302 ₁, 302 ₂, . . .302 _(N) instead of two regions as in the case of device 100 or threeregions as in the case of device 200. Each of the N regions 302 ₁, 302₂, . . . 302 _(N) includes a single unit cell transistor 340 that has agate finger 316. Each unit cell transistor 340 may be configured to havea threshold voltage value that is different from the threshold voltagevalues of all other of the unit cell transistors 340. The thresholdvoltage values for the unit cell transistors 340 may increasemonotonically from left to right in FIG. 5C so that the semiconductordevice 300 will have unit cell transistors 340 having threshold voltagevalues as shown in FIG. 4C that range from V_(TH-1) to V_(TH-N).Elements of semiconductor device 300 that are the same as thecorresponding elements of semiconductor device 100 are identified by thesame reference numerals and further description of these elements isomitted.

FIGS. 4A-4C and 5A-5C illustrate semiconductor device designs wheredifferent unit cell transistors have different threshold voltage valuesin order to provide semiconductor devices 100, 200, 300 that havevariable threshold voltages that are different in different locationswithin the respective devices. In other embodiments, the thresholdvoltage may instead be made to vary within individual unit celltransistors by configuring the unit cells so that the threshold voltagevaries along the gate width of at least some of the individual gatefingers (as noted above, the “width” of a gate finger refers to thedistance that the gate finger extends in parallel between the source anddrain contacts, and is often longer than the “length” of the gatefinger). For example, FIGS. 6A and 6B are plan views of multi-cellsemiconductor devices according to further embodiments of the presentinvention that have threshold voltage values that vary discretely alongthe width of each gate finger (where, as discussed above, the “width” ofthe gate finger is the distance that the gate finger extends in they-direction in the figures).

In particular, FIG. 6A is a plan view of a multi-cell semiconductordevice 400. The semiconductor device 400 is designed to have twodifferent threshold voltage values along the width of each gate finger416 thereof. In other words, the threshold voltage value may vary withineach unit cell transistor 440. In the embodiment of FIG. 4A, a firsthalf 440-1 of each unit cell transistor 440 may have a first thresholdvoltage value V_(TH-1) and the second half 440-2 of each unit celltransistor 440 may have a second threshold voltage value V_(TH-2). Inthe depicted embodiment, the first half 440-1 of each unit celltransistor 440 is the half closest to the gate bus 114, and the secondhalf 440-2 of each unit cell transistor 440 is the half that is remotefrom the gate bus 114. The second threshold voltage value V_(TH-2) maybe either less than or greater than the first threshold voltageV_(TH-1). In FIG. 6A (as well as in the embodiments of FIGS. 6B and 9)the source bus 124 is shown in outline form to reveal the underlyingmetal layers in better detail.

FIG. 6B is a plan view of a multi-cell semiconductor device 500 that hasthree different threshold voltage values along the width of each gatefinger 516 thereof. In particular, an initial third 540-1 of each unitcell transistor 540 may have a first threshold voltage value V_(TH-1), amiddle third 540-2 of each unit cell transistor 540 may have a secondthreshold voltage value V_(TH-2), and an end third 540-3 of each unitcell transistor 540 may have a third threshold voltage value V_(TH-3).The first, second and third threshold voltage values may be differentfrom each other.

FIGS. 7A-7B are graphs illustrating the transconductance and the thirdorder transconductance as a function of the gate-to-source voltagedifferential for multi-cell semiconductor devices having the designsdiscussed above with respect to FIGS. 6A and 6B, respectively (see thedotted lines). The graphs of FIGS. 7A and 7B also include thetransconductance and the third order transconductance as a function ofthe gate-to-source voltage differential for the conventionalsemiconductor device of FIG. 1 as a point of reference (see the solidlines).

As shown in FIGS. 7A and 7B, the peak value of the third ordertransconductance may be reduced significantly by varying the thresholdvoltage along the width of each gate finger. By varying the thresholdvoltage, different portions of the device may turn-on at differentapplied gate voltages. As a result the device may have improvedlinearity. As shown, the more discrete levels of threshold voltageprovided within the device the greater the improvement in the reductionin the third order transconductance. In particular, the conventionalsemiconductor device exhibited a peak third order transconductance valueof −70.2. As shown in FIG. 7A, by designing the device to have twodifferent threshold voltage values in different regions thereof, thepeak third order transconductance value is reduced to −49.78, or byabout 30%. As shown in FIG. 7B, by designing the device to have threedifferent threshold voltage values in different regions thereof, thepeak third order transconductance value is reduced to −22.5, or by about67%. In each case, the non-linearities in the third ordertransconductance extends over a greater voltage range, but the peakvalue, which is what generally creates issues, may be substantiallyreduced.

FIG. 8A is a cross-sectional diagram taken along line 8A-8A of FIG. 6Athat shows a portion of a cross-section of the multi-cell semiconductordevice 400. The semiconductor device 400 includes a semiconductorstructure 120 including a substrate 600, which may, for example, include4H—SiC or 6H—SiC. A channel layer 610 is formed on the substrate 600,and a barrier layer 620 is formed on the channel layer 610. The channellayer 610 and the barrier layer 620 may include Group III-nitride basedmaterials, with the material of the barrier layer 620 having a higherbandgap than the material of the channel layer 610. For example, thechannel layer 610 may comprise GaN, while the barrier layer 620 maycomprise AlGaN. In some embodiments, either or both the channel layer610 and the barrier layer 620 may not be intentionally doped layers. Thechannel layer 610 and the barrier layer 620 may have the sameconductivity type (e.g., n-type). As shown in FIG. 8A, the metal contactstructures including the gate fingers 416, the source contacts 126, thedrain contacts 136, the source bus 124 and the source contact plugs 128may be formed in one or more interlayer insulating layers 630, 640 thatare formed on the barrier layer 620, as may the other metal contactstructures shown in FIG. 6A. The interlayer insulating layers 630, 640may include a dielectric material, such as SiN, SiO₂, etc.

Due to the difference in bandgap between the barrier layer 620 and thechannel layer 610 and piezoelectric effects at the interface between thebarrier layer 620 and the channel layer 610, a two dimensional electrongas (2DEG) is induced in the channel layer 610 at a junction between thechannel layer 610 and the barrier layer 620. The 2DEG acts as a highlyconductive layer that allows conduction between the source and drainregions of the device that are beneath a source contact segment 126 anda drain contact 136, respectively. The source contact 126 and the draincontact 136 are formed on the barrier layer 620. A gate finger 416 isformed on the barrier layer 620 between the drain contact 136 and thesource contact 126. The source bus 124 extends over the source contacts126, drain contacts 136 and gate fingers 416. The source contacts 126physically and electrically connect to the source bus 124 throughrespective vertical contact plugs 128 that penetrate the firstinterlayer insulating layer 630.

The material of the gate fingers 416 may be chosen based on thecomposition of the barrier layer 620. In certain embodiments,conventional materials capable of making a Schottky contact to a nitridebased semiconductor material may be used, such as Ni, Pt, NiSi_(x), Cu,Pd, Cr, W and/or WSiN. The drain contacts 136 and source contacts 126may, for example, include a metal, such as TiAlN, that can form an ohmiccontact to GaN and/or AlGaN.

While cross-sectional diagrams are not provided for various of the othersemiconductor devices according to embodiments of the present inventionthat are disclosed herein, it will be appreciated that each of thosedevices may have the same general semiconductor structure 120 as shownin FIG. 8A. Particular embodiments may have specific variations, such aschanges in doping concentrations or recesses in the barrier layer 620,as described herein. It will also be appreciated that any of thedisclosed embodiments may include additional layers such as, forexample, buffer layers or the like that are not shown in FIG. 8A.

FIG. 8B is a cross-sectional diagram taken along line 8B-8B of FIG. 6Athat shows a cross-section of the multi-cell semiconductor device 400 ofFIG. 6A taken in the y-direction. The semiconductor device 400 includesthe above-described semiconductor structure 120 that includes asubstrate 600, a channel layer 610, and a barrier layer 620. The gatefinger 416 extends along the semiconductor structure in the y-direction.As shown in FIG. 8B, the upper surface of the barrier layer 620 may berecessed on the right side of the semiconductor structure 120. The gatefinger 416 may have a consistent thickness in the z-direction. However,because of the recess 622 in the barrier layer 620, a bottom surface ofthe first half 416-1 of gate finger 416 may be closer to the channellayer 610 than is a bottom surface of the second half 416-2 of gatefinger 416. As a result, the threshold voltage value V_(TH-1) for thefirst half 416-1 of each gate finger 416 may be different than thethreshold voltage value V_(TH-2) for the second half 416-2 of each gatefinger 416.

The barrier layer 620 may be recessed so that a top surface of theportion of the barrier layer 620 that is under the first half 416-1 ofeach gate finger 416 may be lower in the z-direction than the topsurface of the portion of the barrier layer 620 that is under the secondhalf 416-2 of each gate finger 416 by, for example, between 1 and 15 nm.This distance may be referred to herein as the “depth” of the recess622. The depth of the recess 622 may be chosen to obtain a desiredamount of difference between the first and second threshold voltagevalues V_(TH-1), V_(TH-2).

FIG. 9 is a schematic plan view of a multi-cell semiconductor device 700according to further embodiments of the present invention. Thesemiconductor device 700 combines aspects of the semiconductor device100 of FIG. 5A and the semiconductor device 400 of FIG. 6A. As shown inFIG. 9, the semiconductor device 700 includes a plurality of gatefingers 716. The gate fingers 716 may include first gate fingers 716 aand second gate fingers 716 b. The gate fingers 716 a may be in a firstregion 702 ₁ of the semiconductor structure 120, and the gate fingers716 b may be in a second region 702 ₂ of the semiconductor structure120. The gate fingers 716 a may each be part of a unit cell transistor740 a, and the gate fingers 716 b may each be part of a unit celltransistor 740 b. Each unit cell transistor 740 a is designed to havetwo different threshold voltage values along the width thereof. Inparticular, a first half 740-1 of each unit cell transistor 740 a mayhave a first threshold voltage value V_(TH-1) and the second half 740-2of each unit cell transistor 740 a may have a second threshold voltagevalue V_(TH-2).

In the second region 702 ₂, each unit cell transistor 740 b is similarlydesigned to have two different threshold voltage values along the widththereof. In particular, a first half 740-1 of each unit cell transistor740 b may have a third threshold voltage value V_(TH-3) and the secondhalf 740-2 of each unit cell transistor 740 b may have a fourththreshold voltage value V_(TH-4). The first through fourth thresholdvoltage values V_(TH-1) through V_(TH-4) may comprise differentthreshold voltage values.

It will be appreciated that which particular unit cell transistors,and/or portions thereof, that have the different threshold voltagevalues may be arbitrarily selected. Thus, while the graphs of FIGS.4A-4C and the plan views of FIGS. 5A-5C, 6A-6B and 9 illustratemulti-cell semiconductor devices that have unit cell transistors withthreshold voltages that monotonically increase (either discretely orcontinuously) along the x-direction in the figures, embodiments of thepresent invention are not limited thereto. This is shown schematicallywith reference to FIGS. 10A-10C, which are schematic graphs illustratingthe threshold voltage variation in multi-cell semiconductor devicesaccording to further embodiments of the present invention.

As shown in FIG. 10A, in an example embodiment, a first subset of theunit cell transistors are designed to have a first threshold voltagevalue V_(TH-1), a second subset of the unit cell transistors aredesigned to have a second threshold voltage value V_(TH-2), and a thirdsubset of the unit cell transistors are designed to have a thirdthreshold voltage value V_(TH-3). The first subset of the unit celltransistors is on the left hand side of the transistor, the secondsubset of the unit cell transistors is in the middle of the transistor,and the third subset of the unit cell transistors is on the right handside of the transistor. As shown in FIG. 10A, the first thresholdvoltage value V_(TH-1) is the highest value, the second thresholdvoltage value V_(TH-2) is the lowest threshold voltage value, and thethird threshold voltage value V_(TH-3) is an intermediate thresholdvoltage value.

Referring next to FIG. 10B, it can be seen that in another exampleembodiment, a similar approach may be taken in a multi-cellsemiconductor device in which every unit cell transistor has a differentthreshold voltage value. In the embodiment of FIG. 10B, the unit celltransistors are divided into three subsets of adjacent unit celltransistors, where each subset of unit cell transistors hasmonotonically increasing threshold voltage values. While FIG. 10B showsthat the unit cell transistors may be divided into three subsets ofadjacent unit cell transistors, it will be appreciated that more orfewer subsets may be provided.

Referring next to FIG. 10C, in yet another example embodiment, amulti-cell semiconductor device may have subsets of adjacent unit celltransistors that have monotonically increasing threshold voltage valuesas well as subsets of adjacent unit cell transistors that havemonotonically decreasing threshold voltage values.

It will be appreciated that FIGS. 10A-10C show three of many possibledesigns. In the extreme, a semiconductor device may have a large numberof unit cell transistors (e.g., 100), each of which has a differentthreshold voltage value, where the unit cell transistors are randomlydistributed throughout the device. It will also be appreciated that thesame sorts of variation may be done along the width of each unit celltransistor.

Thus, according to embodiments of the present invention, RF poweramplifiers or other multi-cell transistors may be provided that includea plurality of unit cell transistors on a common semiconductorstructure, the unit cell transistors electrically connected in parallel,and each unit cell transistor including a respective gate finger, wherethreshold voltages for the gate fingers thereof are different. Therespective threshold voltages of different sets of one or more of theunit cell transistors may differ by at least 0.1 volts. The differencesin threshold voltage may be achieved, for example, by varying athickness of gallium nitride based barrier layer in different regions ofthe semiconductor device.

The respective gate fingers may extend in parallel to each other, and insome embodiments the threshold voltages for the plurality of gatefingers may monotonically increase across the semiconductor device asshown, for example, in FIGS. 4A-4C. In other embodiments, the thresholdvoltages for the plurality of gate fingers may monotonically decreaseacross the semiconductor device. This is also shown in FIGS. 4A-4C ifthe semiconductor device is viewed from right-to-left as opposed toleft-to-right. In still other embodiments, the threshold voltages forthe plurality of gate fingers may monotonically increase across a firstportion of the semiconductor device and then monotonically decreaseacross a second portion of the semiconductor device that is adjacent thefirst portion as shown, for example, in FIGS. 10A-10C. Alternatively,the plurality of gate fingers may monotonically decrease across a firstportion of the semiconductor device and then monotonically increaseacross a second portion of the semiconductor device that is adjacent thefirst portion, which is also shown in each of FIGS. 10A-10C. Thethreshold voltages for the plurality of gate fingers may varysymmetrically across the semiconductor device in some embodiments, andmay vary asymmetrically across the semiconductor device in otherembodiments.

As discussed above with reference to FIG. 8B, one technique for varyingthe threshold voltage in different regions of the transistors accordingto embodiments of the present invention is to change the thickness ofthe barrier layer under portions of some or all of the gate fingers.This technique may be used, for example, to form the semiconductordevices 400 and 500 of FIGS. 6A and 6B, respectively. Similarly, thethickness of the barrier layer may be varied underneath differentsubsets of the unit cell transistors. Such a technique may be used toform the semiconductor devices 100, 200 and 300 of FIGS. 5A-5C,respectively. These two techniques may be combined to form thesemiconductor device 700 of FIG. 9. It will be appreciated, however,that other techniques may be used to vary the threshold voltage indifferent regions of the semiconductor devices according to embodimentsof the present invention.

For example, referring to FIG. 11A, according to further embodiments ofthe present invention, the threshold voltage may be varied by usingdifferent metals or metal alloys to form different gate fingers and/ordifferent portions of the same gate finger 650. As shown in FIG. 11A, agate finger 650 is formed on the barrier layer 620. The gate finger 650extends along the y-direction, and is formed using three differentmetals or metal alloys 652, 654, 656. The different metals may beselected to achieve a desired variation in the threshold voltages underthe three different sections of the gate finger 650.

Referring next to FIG. 11B, in another approach, portions of the channellayer 610 may be doped to change the threshold voltage under differentportions of the gate fingers 650. As shown in FIG. 11B, portions 612,614, 616 of the channel layer 610 that are under different portions ofone or more of the gate fingers 650 may have different dopantconcentrations. The doping concentrations (e.g., n-type dopants whichmay be, for example, silicon if the channel layer 610 comprises agallium nitride based channel layer) may be selected to achieve adesired variation in the threshold voltages under the three differentsections of the gate finger 650. In some embodiments, p-type dopantscould be used instead or a combination of n-type dopants in someportions and p-type dopants in other portions. It may be possible toachieve the same effect by doping sections of the barrier layer 620.

Referring to FIG. 11C, in yet another approach, different portions ofthe barrier layer 620 may have different material compositions. Forexample, the barrier layer may comprise an Al_(x)Ga_(1-x)N layer. Thevalue of “x” may be different in each of various portions 622, 624, 626of the barrier layer 620 that are under different portions of the gatefingers 650 in order to vary the threshold voltage value.

While, FIGS. 8A and 11A-11C show several example ways for varying thethreshold voltage in different regions of a multi-gate fingertransistor, it will be appreciated that embodiments of the presentinvention are not limited to these techniques. For example, in yetanother approach, insulating layers having different thicknesses may beformed between the barrier layer between respective subsets of the gatefingers to provide unit cell transistors having different thresholdvoltage values. The same technique may be used along the width of thegate fingers to provide unit cell transistors that have varied thresholdvoltage values.

Referring next to FIG. 12, a semiconductor wafer 800 is schematicallyillustrated that includes a plurality of multi-cell semiconductordevices 810 formed thereon. As shown in FIG. 12, a large number ofmulti-cell semiconductor devices 810 may be formed on wafer 800. In thedepicted embodiment, approximately forty multi-cell semiconductordevices 810 fit along the diameter of the wafer 800. More or fewermulti-cell semiconductor devices 810 may be provided. Moreover, whilethe individual multi-cell semiconductor devices 810 are illustrated inFIG. 12 as being square, it will be appreciated that more commonly eachmulti-cell semiconductor devices has a generally rectangular shape, withthe length of adjacent sides varying by perhaps a factor of ten inexample embodiments.

Due to variations in semiconductor growth and processing techniques,there typically is some variation in the threshold voltage across asemiconductor wafer. For example, a typical variation may be in therange of 0.1 to 0.4 volts. However, given the large number of multi-cellsemiconductor devices 810 formed on the wafer 800, the variation inthreshold voltage due to processing variations within the footprint ofany particular multi-cell semiconductor device will be much smaller,such as in the range of 0.0001 to 0.0004 volts. Such small variations doessentially nothing to spread out the device turn-on. As discussedabove, pursuant to embodiments of the present invention, largervariations in the threshold voltage values may be deliberatelyengineered into the device design, such as variations on the order of0.05 to 1.25 volts. Such variations may be used to spread out thethreshold voltages over which different portions of a multi-cellsemiconductor device turn on, thereby significantly lowering the peakthird order transconductance values in order to provide improvedlinearity.

FIG. 13 is a schematic circuit diagram of the multi-cell semiconductordevice 100 of FIG. 5A. As shown in FIG. 13, the semiconductor device 100includes a plurality of unit cell transistors 140. The unit celltransistors 140 are electrically connected in parallel. A first subsetof the unit cell transistors 140 may have a first threshold voltagevalue V_(TH-1) while a second subset of the unit cell transistors 140may have a second threshold voltage value V_(TH-2) that is differentthan the first threshold voltage value V_(TH-1).

While engineering the threshold voltage is one way of improving thelinearity of a multi-cell semiconductor device, it will be appreciatedthat the same effect may be achieved by applying different gate voltagesto different portions of the device. FIG. 14 schematically illustratesthis approach.

In particular, as shown in FIG. 14, according to further embodiments ofthe present invention, different threshold voltages may be applied todifferent portions of a semiconductor device in order to smooth out thethird order transconductance at device turn-on in order to provideimproved linearity. As shown in FIG. 14, a semiconductor device 900according to embodiments of the present invention may include aconventional semiconductor device such as the semiconductor device 10 ofFIG. 1. As described above with reference to FIG. 1, and as shown incircuit diagram format in FIG. 14, the conventional semiconductor device10 may include a plurality of unit cell transistors 40 that are formedon a common wide bandgap semiconductor structure and that areelectrically connected in parallel. Each unit cell transistor 40 mayinclude a gate finger. The threshold voltage may be the same along thewidth of each gate finger, and each unit cell transistor 40 may have thesame threshold voltage.

As described above, the conventional semiconductor device 10 may exhibitlarge third order transconductance values at device turn-on as all ofthe unit cell transistors 40 will turn on to the same degree in responseto application of a threshold voltage. In order to avoid this, thesemiconductor device 900 further includes a voltage divider circuit 910.The voltage divider circuit 910 may receive a voltage signal at an inputthereof and may output a plurality of output voltage signals in responsethereto. Each output voltage signal may have a different value. In thedepicted embodiment, the voltage divider 910 has two outputs, but thevoltage divider 910 may have more than two outputs in other embodiments.

As is also shown in FIG. 14, each output of the voltage divider 910 maybe coupled to a subset of the unit cell transistors 40 and applied tothe gate fingers thereof. Thus, the gate fingers of a first subset ofthe unit cell transistors 40 receive the first output voltage signalfrom the voltage divider 910, and the gate fingers of a second subset ofthe unit cell transistors 40 receive the second output voltage signalfrom the voltage divider 910. The first and second output voltagesignals of the voltage divider 910 may differ, for example, by at least0.1 volts. In some embodiments, the first and second output voltagesignals of the voltage divider 910 may differ, for example, by at least0.25 volts. In other embodiments, the first and second output voltagesignals of the voltage divider 910 may differ, for example, by at least0.5 volts. In still other embodiments, the first and second outputvoltage signals of the voltage divider 910 may differ, for example, bybetween 0.1 and 1.25 volts. Since the gate fingers of the first andsecond subsets of unit cell transistors 40 receive different voltages,the unit cell transistors 40 in these subsets may turn on at differentdegrees. As described above, by spreading the turn-on voltage forvarious groups of unit cell transistors, the peak third ordertransconductance value may be reduced. If the voltage divider 910 hasmore than two outputs, then the unit cell transistors 40 ofsemiconductor device 10 may be divided into more than two subgroups,with each subgroup receiving one of the outputs of the voltage divider.

FIG. 15 is a graph illustrating the transconductance and the third ordertransconductance as a function of the applied threshold voltage for thesemiconductor device 900 of FIG. 14 (the dotted lines in FIG. 15) ascompared to a conventional device (the solid lines in FIG. 15). As shownin FIG. 15, the peak third order transconductance value is reduced inhalf as compared to the conventional device.

FIG. 16 is a circuit diagram that schematically illustrates how avoltage divider may be implemented on the wafer in order to implement asemiconductor device 900′ that is similar to the semiconductor device900 of FIG. 14. As shown in FIG. 16, a voltage divider circuit 910′ maybe implemented using a series of resistors 920 that are disposed betweenthe gate fingers of the unit cell transistors 40 of the semiconductordevice 10 of FIG. 1. The resistors 920 may be sized to createdifferences in the voltage applied to the gate fingers of adjacent unitcell transistors 40 in response to application of a voltage to the gate.In the embodiment of FIG. 16, a total of four unit cell transistors 40are shown by way of example, and the voltage divider 910′. As a result,a different voltage will be applied to the gate fingers of therespective unit cell transistors 40 in response to application of avoltage to the gate (i.e., in the embodiment of FIG. 16, every unit celltransistor 40 receives a different gate voltage). It will be appreciatedthat in other embodiments subsets of the gate fingers may receive thesame gate voltages. For example, in another embodiment, each unit celltransistor 40 in FIG. 16 could be replaced with a two, three, four ormore unit cell transistors 40 that are disposed in parallel. In such adevice, the unit cell transistors 40 would turn-on at four differentrates (degrees) in response to application of a gate voltage. four

Inductors 930 may be provided for DC coupling and by-pass capacitors 940may be added for RF decoupling. The resistors 920 may be formed on waferby, for example, depositing conductive materials that have a different(higher) resistance than the remainder of the conductive lines or bychanging the properties of selected portions of the conductive lines(e.g., by oxidization). Such techniques for forming on-wafer resistorsare well-known in the art. The inductors 930 may also be implemented onwafer. For example, the inductors 930 may be implemented as meanderedconductive lines on the wafer. In the depicted embodiment, thecapacitors 940 are formed off of the wafer.

FIG. 17 is a schematic circuit diagram of a semiconductor device 900″according to further embodiments of the present invention that includesa voltage divider that is partially implemented on-wafer. As shown inFIG. 17, the semiconductor device 900″ is very similar to thesemiconductor device 900′ of FIG. 16, except that the inductors 930 ofthe voltage divider 910″ of semiconductor 900″ are implemented off thewafer. Such an implementation may be advantageous in some embodimentsbecause the size of the necessary inductance may be large in some cases,which may make it difficult to implement on the wafer, and/or becausethe associated loss may be reduced if the inductors 930 are implementedseparately off the wafer (as are the capacitors 940). As thesemiconductor device 900″ otherwise is identical to the semiconductordevice 900′ of FIG. 16, further description thereof will be omitted.

Embodiments of the present invention may be particularly well suited foruse in connection with Group III-nitride based high electron mobilitytransistor (HEMT) devices. As used herein, the term “Group III nitride”refers to those semiconducting compounds formed between nitrogen and theelements in Group III of the periodic table, usually aluminum (Al),gallium (Ga), and/or indium (In). The term also refers to ternary andquaternary compounds such as AlGaN and AlInGaN. These compounds all haveempirical formulas in which one mole of nitrogen is combined with atotal of one mole of the Group III elements.

Suitable structures for GaN-based HEMTs that may utilize embodiments ofthe present invention are described, for example, in commonly assignedU.S. Publication No. 2002/0066908A1 published Jun. 6, 2002, for“Aluminum Gallium Nitride/Gallium Nitride High Electron MobilityTransistors Having A Gate Contact On A Gallium Nitride Based Cap SegmentAnd Methods Of Fabricating Same,” U.S. Publication No. 2002/0167023A1for “Group-III Nitride Based High Electron Mobility Transistor (HEMT)With Barrier/Spacer Layer,” published Nov. 14, 2002, U.S. PublicationNo. 2004/0061129 for “Nitride-Based Transistors And Methods OfFabrication Thereof Using Non-Etched Contact Recesses,” published onApr. 1, 2004, U.S. Pat. No. 7,906,799 for “Nitride-Based TransistorsWith A Protective Layer And A Low-Damage Recess” issued Mar. 15, 2011,and U.S. Pat. No. 6,316,793 entitled “Nitride Based Transistors OnSemi-Insulating Silicon Carbide Substrates,” issued Nov. 13, 2001, thedisclosures of which are hereby incorporated herein by reference intheir entirety.

In particular embodiments of the present invention, the substrate 600may be a semi-insulating silicon carbide (SiC) substrate that may be,for example, 4H polytype of silicon carbide. Other silicon carbidecandidate polytypes include the 3C, 6H, and 15R polytypes.

Optional buffer, nucleation and/or transition layers (not shown) may beprovided on the substrate 600 beneath the channel layer 610. Forexample, an AlN buffer layer may be included to provide an appropriatecrystal structure transition between the silicon carbide substrate andthe remainder of the device. Additionally, strain balancing transitionlayer(s) may also be provided as described, for example, in commonlyassigned U.S. Publication 2003/0102482A1, published Jun. 5, 2003, andentitled “Strain Balanced Nitride Hetrojunction Transistors And MethodsOf Fabricating Strain Balanced Nitride Heterojunction Transistors,” thedisclosure of which is incorporated herein by reference as if set forthfully herein. Moreover, one or more capping layers, such as SiN cappinglayers, may be provided on the barrier layer 620.

Silicon carbide has a much closer crystal lattice match to Group IIInitrides than does sapphire (Al₂O₃), which is a very common substratematerial for Group III nitride devices. The closer lattice match of SiCmay result in Group III nitride films of higher quality than thosegenerally available on sapphire. Silicon carbide also has a very highthermal conductivity so that the total output power of Group III nitridedevices on silicon carbide is, typically, not as limited by thermaldissipation of the substrate as in the case of the same devices formedon sapphire. Also, the availability of semi-insulating silicon carbidesubstrates may provide for device isolation and reduced parasiticcapacitance. Appropriate SiC substrates are manufactured by, forexample, Cree, Inc., of Durham, N.C., the assignee of the presentinvention.

Although silicon carbide may be used as a substrate material,embodiments of the present invention may utilize any suitable substrate,such as sapphire, aluminum nitride, aluminum gallium nitride, galliumnitride, silicon, GaAs, LGO, ZnO, LAO, InP and the like. In someembodiments, an appropriate buffer layer also may be formed.

In some embodiments of the present invention, the channel layer 610 is aGroup III-nitride, such as Al_(x)Ga_(1-x)N where 0≤x<1, provided thatthe energy of the conduction band edge of the channel layer 610 is lessthan the energy of the conduction band edge of the barrier layer 620 atthe interface between the channel and barrier layers. In certainembodiments of the present invention, x=0, indicating that the channellayer 610 is GaN. The channel layer 610 may also be other GroupIII-nitrides such as InGaN, AlInGaN or the like. The channel layer 610may be undoped or unintentionally doped and may be grown to a thicknessof greater than about 20 Å. The channel layer 610 may also be amulti-layer structure, such as a superlattice or combinations of GaN,AlGaN or the like.

The channel layer 610 may have a bandgap that is less than the bandgapof the barrier layer 620, and the channel layer 610 may also have alarger electron affinity than the barrier layer 620. In certainembodiments of the present invention, the barrier layer 620 is AlN,AlInN, AlGaN or AlInGaN. In particular embodiments of the presentinvention, the barrier layer 620 is thick enough and has a high enoughAl composition and doping to induce a significant carrier concentrationat the interface between the channel layer 610 and the barrier layer620.

The barrier layer 620 may be a Group III-nitride and has a bandgaplarger than that of the channel layer 610 and a smaller electronaffinity than the channel layer 610. Accordingly, in certain embodimentsof the present invention, the barrier layer 620 may include AlGaN,AlInGaN and/or AlN or combinations of layers thereof. The barrier layer620 may, for example, be from about 0.1 nm to about 30 nm thick. Incertain embodiments of the present invention, the barrier layer 620 isundoped or doped with an n-type dopant to a concentration less thanabout 10¹⁹ cm⁻³. In some embodiments of the present invention, thebarrier layer 620 is Al_(x)Ga_(1-x)N where 0<x<1. In particularembodiments, the aluminum concentration is about 25%. However, in otherembodiments of the present invention, the barrier layer 620 comprisesAlGaN with an aluminum concentration of between about 5% and about 100%.In specific embodiments of the present invention, the aluminumconcentration is greater than about 10%.

While embodiments of the present invention are illustrated withreference to a gallium nitride based HEMT structure, the presentinvention is not limited to such devices. Thus, embodiments of thepresent invention may be suitable for use in any field effecttransistor, and can be used in devices that do or do not have unit cellstructures. It will likewise be appreciated that the techniquesdisclosed herein may also be used in material systems other than galliumnitride based material systems.

As discussed above, gallium nitride based HEMT devices are well suitedfor many RF power amplifier applications, particularly in wirelesscommunications applications, due to their high power handlingcapabilities. However, gallium nitride based HEMT devices may exhibitreduced linearity as compared to other high power RF power amplifiertechnologies such as silicon-based LDMOS power amplifiers. As describedabove, one type of non-linearity that may arise in unit-cell based RFpower amplifiers formed in gallium nitride based materials is thirdorder intermodulation products that may be generated in the outputsignal at device turn-on in response to sharp variations in the thirdorder transconductance of the device.

Another undesirable effect that may arise with gallium nitride basedHEMT RF power amplifiers is soft gain compression. Gain compressionrefers to a reduction in the gain of the device (where the gain isdefined as the ratio of the RF output power of the device to the RFinput power) that may occur with increasing RF input power levels. Thegain response for an RF power amplifier typically includes a so-called“linear region” where the gain remains relatively constant as the inputpower level is changed, as well as a so-called “deep compression region”where the gain drops with increasing input power level. The deepcompression region of the gain response occurs at higher power levelsthan the linear region, and the rate of reduction in gain typicallystarts to increase rapidly with even small changes in input power levelin the gain compression region. Depending upon the direct currentbiasing conditions applied to the RF amplifier, the gain response mayalso include an “expansion region,” which is at input power levels thatare lower than the input power levels for the linear region. In theexpansion region, the gain increases with increasing input power. Inmany RF amplifiers, the gain may remain relatively stable in the regionbetween the expansion region and the compression region. Gallium nitridebased RF power amplifiers tend to suffer from an effect known as softgain compression, which refers to a noticeable reduction in gain thatoccurs between the linear region and the compression region of the gainresponse curve. While the reduction in gain in the soft compressionregion is not as pronounced as the reduction in the gain compressionregion, it is typically large enough such that it can severely limit theRF input power levels that can be applied while keeping the amount ofgain compression under a predefined value such as 1 dB or 3 dB of gaincompression. In gallium nitride based RF power amplifiers, the softcompression region may be quite large, resulting in a dramatic reductionin the size of the linear region or elimination of the linear regionaltogether.

The sharp changes in the third order transconductance and thegate-to-source capacitance that occur at device turn-on may generateamplitude-to-amplitude modulation (AM-AM distortion) andamplitude-to-phase modulation (AM-PM distortion). Both types ofdistortion can lead to soft compression behavior. This, in turn, maydegrade the data rates that are supportable on a communications channelthat includes the gallium nitride based HEMT RF power amplifier.

As described above, by engineering the threshold voltage of the RF poweramplifier so that different portions of the RF power amplifier areturned on at different levels in response to an input signal, thenon-linearities caused by the sharp changes in the third ordertransconductance may be reduced significantly, improving the linearityof the amplifier. It has been discovered that this engineering of thethreshold voltage of the RF power amplifier may likewise reduce thesharp increases in the gate-to-source capacitance that may occur atdevice turn-on, providing additional improvements in the linearity ofthe device. In effect, embodiments of the present invention provide waysof modifying the third order transconductance and the gate-to-sourcecapacitance responses of the RF power amplifier at device turn-on in amanner that allows the non-linear mechanisms to interact and partiallycancel each other out, thereby reducing the overall degree ofnon-linearity.

The improvement in the third order transconductance response can be seenin FIGS. 7A-7B and 15, which compare, among other things, the thirdorder transconductance response of RF power amplifiers according toembodiments of the present invention to a comparable conventional RFpower amplifier. As can be seen in FIGS. 7A-7B and 15, the third ordertransconductance response of the conventional RF power amplifier has asingle positive peak and a single negative peak that result from theturn-on behavior of the gallium nitride based unit cell transistors. Incontrast, the third order transconductance responses of the RF poweramplifiers according to embodiments of the present invention havemultiple positive peaks and multiple negative peaks. Multiple peaksoccur because different portions of the device turn on at differentlevels in response to application of an input signal.

Thus, as shown in FIGS. 7A-7B and 15, embodiments of the presentinvention provide RF power amplifiers that include a plurality of unitcell transistors on a common wide bandgap semiconductor structure, wherethe unit cell transistors electrically connected in parallel, and eachunit cell transistor including a respective gate finger. By, forexample, engineering the threshold voltages of the unit cell transistorsand/or engineering the gate voltages applied to the unit celltransistors, the unit cell transistors may be configured so that a thirdorder transconductance response of the RF power amplifier includes atleast three peaks. For example, the third order transconductanceresponse of the RF power amplifier may include at least two positivepeaks and at least two negative peaks. The positive peaks may be lowerin magnitude than the positive peaks in the third order transconductanceresponse of a comparable conventional RF power amplifier, and thenegative peaks may be lower in magnitude (less negative) than thenegative peaks in the third order transconductance response of acomparable conventional RF power amplifier. Additionally, the peaks maybe spread out over a wider range of gate-to-source voltages. As aconsequence, the third order transconductance response of the RF poweramplifier may be smoothed, and the non-linearities generated byperturbations in that response may be reduced.

As can further be seen in FIGS. 7A-7B and 15, the at least two positivepeaks and at least two negative peaks may all appear in the third ordertransconductance response at gate-to-source voltage values that arewithin 2 volts of a turn-on gate-to-source voltage for the device (i.e.,within 2 volts of the gate-to-source voltage where the channel currentstarts changing from zero to a non-negligible positive value). Thesecond positive peak may occur at a higher gate-to-source voltage levelthan the first positive peak, and the second positive peak may have ahigher third order transconductance value than the first positive peak.The second negative peak may occur at a higher gate-to-source voltagelevel than the first negative peak, and the second negative peak mayhave a lower (i.e., more negative) third order transconductance valuethan the first negative peak. In some embodiments, the unit celltransistors may be configured so that a third order transconductanceresponse of the RF power amplifier includes at least three positivepeaks and at least three negative peaks.

A series of RF power amplifiers 1000 were fabricated that had thegeneral design of the RF amplifier 400 illustrated in FIGS. 6A and8A-8B. However, instead of fabricating each gate finger 440 to have afirst region 440-1 that has a first threshold voltage and a secondregion 440-2 that has a second threshold voltage, each gate finger 440included a plurality of smaller first regions 440-1 that had the firstthreshold voltage separated by a plurality of second regions 440-2 thathad the second threshold voltage, as is schematically shown in FIGS.18A-18B.

In particular, FIGS. 18A and 18B schematically illustrate a multi-cellRF power amplifier 1000 according to further embodiments of the presentinvention. FIG. 18A is a plan view of the RF amplifier 1000, and FIG.18B is a cross-sectional view taken along line 18B-18B of FIG. 18A. TheRF amplifier 1000 is very similar to the RF semiconductor device 400that is discussed above with reference to FIGS. 6A and 8A-8B. Thus, thediscussion below will focus on the differences between RF amplifier 1000and RF amplifier 400.

Like the RF amplifier 400, the RF amplifier 1000 depicted in FIGS. 18Aand 18B is designed to have two different threshold voltage values alongthe width of each gate finger 1016 thereof. However, in RF amplifier1000, each gate finger 1016 is divided into more than two segmentshaving different threshold voltages. Specifically, in the depictedembodiment, each gate finger 1016 is divided into four separatesegments, 1016-1 through 1016-4, with two of the segments 1016-1, 1016-3having the first threshold voltage V_(T1-14) and the other two segments1016-2, 1016-4 having the second threshold voltage V_(TH-2). Thus, eachunit cell transistor 1040 of RF amplifier 1000 may be viewed as havingfour separate sections, namely first and third sections 1042-1, 1042-3that have the first threshold voltage value V_(TH-1) and second andfourth sections 1042-2, 1042-4 that have the second threshold voltagevalue V_(TH-2). In the depicted embodiment, the second threshold voltageV_(TH-2) is greater than the first threshold voltage V_(TH-1). Thevariation in threshold voltage is provided by forming recesses 622 inthe gallium nitride based barrier layer 620 underneath the first andthird segments 1016-1, 1016-3 of each gate finger 1016, as shown in FIG.18B.

A total of four wafers were fabricated, and each wafer included four RFpower amplifiers having the general design of the RF amplifier 1000 ofFIGS. 18A-18B. The sixteen RF power amplifiers included on these fourwafers differed, however, in terms of (1) the depth of recesses 622 inthe barrier layer 620 (which impacts the difference between the firstthreshold voltage V_(TH-1) and the second threshold voltage V_(TH-2))and (2) the percentages of each gate finger that had the first thresholdvoltage V_(TH-1) and the second threshold voltage V_(TH-2). A total offour different depths for the recesses 622 were used, namely recessdepths of 4 nm, 6 nm, 8 nm and 10 nm. Likewise, the gate fingers in eachRF power amplifier were designed so that the portion of the activeregion of each gate finger 1016 that had the first threshold voltageV_(TH-1) varied.

Herein, the sum of the widths of the active portions of the gate fingers1016 (wherein the active portion of a gate finger 1016 refers to theportion that is between a corresponding drain finger and a correspondingsource finger) is referred to as the “gate periphery” of the RF poweramplifier 1000. Thus, referring to FIG. 18A, the gate periphery for theRF power amplifier depicted therein would be 10*W, since the amplifier1000 includes a total of 10 gate fingers 1016 and the width of theactive portion of each gate finger 1016 is W. As noted above, in each ofthe experimental RF power amplifiers 1000 that were fabricated, adifferent percentage of the total gate finger length (i.e., a differentpercentage of the gate periphery) had the first threshold voltageV_(TH-1). In particular, in four of the RF power amplifiers 1000, 45% ofthe gate periphery had the first threshold voltage V_(TH-1) (and theremaining 55% of the gate periphery had the second threshold voltageV_(TH-2)), in another four of the RF power amplifiers 1000, 50% of thegate periphery had the first threshold voltage V_(TH-1) (and theremaining 50% of the gate periphery had the second threshold voltageV_(TH-2)), in another four of the RF power amplifiers 1000, 55% of thegate periphery had the first threshold voltage V_(TH-1) (and theremaining 45% of the gate periphery had the second threshold voltageV_(TH-2)), and in the final four of the RF power amplifiers 1000, 100%of the gate periphery had the second threshold voltage V_(TH-2). Theperformance of these sixteen RF power amplifiers was compared to theperformance of a conventional RF power amplifier in which 100% of thegate periphery had the first threshold voltage V_(TH-1) (i.e., thebarrier layer 620 did not include any recesses 622). The table belowshows the characteristics of the sixteen experimental RF poweramplifiers 1000 that were fabricated, which are labelled 1000A through1000P for convenience. The conventional RF power amplifier is labelled1000Q.

Depth of Recess Percentage of Gate Periphery RF Amplifier (nm) HavingV_(TH-2) 1000A 4 45% 1000B 6 45% 1000C 8 45% 1000D 10 45% 1000E 4 50%1000F 6 50% 1000G 8 50% 1000H 10 50% 1000I 4 55% 1000J 6 55% 1000K 8 55%1000L 10 55% 1000M 4 100% 1000N 6 100% 1000O 8 100% 1000P 10 100% 1000Q0 0%

FIG. 19A is a graph that illustrates the measured transconductance atdevice turn-on for the four RF amplifier designs that included a 10 nmrecess 622 in the barrier layer 620, namely RF power amplifiers 1000D,1000H, 1000L and 1000P as compared to the conventional RF poweramplifier 1000Q. As shown in FIG. 19A, the conventional RF poweramplifier 1000Q exhibits a rapid increase in transconductance as soon asthe input gate signal reaches the threshold voltage for the device(about −3 volts) and then peaks at about −2 volts. After reaching thispeak, the transconductance slowly decreases. The RF amplifier design1000P in which 100% of the gate periphery is implemented using recessedgate fingers illustrates similar transconductance behavior at deviceturn-on, except that the curve is shifted to the right (since RFamplifier design 1000P turns on at a threshold voltage of about −2 voltsdue to the recessed gate fingers), and the overall increase intransconductance is larger.

As is also shown in FIG. 19A, RF power amplifiers 1000D, 1000H and 1000Lexhibit a significantly different transconductance response at deviceturn-on. In particular, for each of these RF power amplifiers 1000D,1000H and 1000L, the transconductance response at device turn-on has afirst region 1001 in which the transconductance increases fairlyrapidly, albeit at a rate that is less than the rate of increase seen inthe same region 1001 for the conventional RF power amplifier 1000Q. Thefirst region 1001 generally corresponds to transconductance values fromabout 0-100 mS/mm. The rate of increase in the transconductanceexhibited by RF power amplifiers 1000D, 1000H and 1000L then decreasessignificantly with increasing gate voltage in a second region 1002 thatgenerally corresponds to transconductance values of about 100-160 mS/mm.

The transconductance response then exhibits a relatively sharp increasein a third region 1003 corresponding to transconductance values of about160-300 mS/mm, at which point the transconductance reaches a peak.Thereafter, in a fourth region 1004, the transconductance slowlydecreases in a manner similar to the transconductance for theconventional RF power amplifier 1000Q. It should be noted that the peaktransconductance value for RF power amplifiers 1000D, 1000H and 1000L isactually higher than the peak transconductance value for theconventional RF power amplifier 1000Q. However, the increase in thetransconductance is spread out over a wider range of applied gatevoltages, meaning that the increase in transconductance will occur moreslowly at device turn-on.

The difference between the transconductance response of RF poweramplifiers 1000D, 100014 and 1000L and the transconductance response ofthe conventional RF power amplifier 1000Q may be attributed to the factthat different parts of the gate periphery turn on at different levelsin response to application of a gate voltage to the RF power amplifiers1000D, 1000H and 1000L. As a result, the transconductance ramps up bothmore slowly (i.e., the slope is reduced) and to a lesser degree inregion 1001 as compared to the conventional RF power amplifier 1000Q,and then in region 1002 the rate of increase in the transconductance forRF power amplifiers 1000D, 1000H and 1000L starts to plateau as thefirst and third sections 1042-1, 1042-3 of each unit cell transistor1040 turn on, while the second and fourth sections 1042-2, 1042-4 ofeach unit cell transistor 1040 remain in a substantially off state. Asthe voltage is increased further, the second and fourth sections 1042-2,1042-4 of each unit cell transistor 1040 start to turn-on, and thetransconductance again starts to increase at a faster rate. While thetransconductance of RF power amplifiers 1000D, 1000H and 1000Leventually reaches similar (and actually slightly higher values) ascompared to the transconductance of the conventional RF power amplifier1000Q, the threshold voltage engineering acts to insert a plateau intothe transconductance response curve (section 1002) so that the sharpincrease in the transconductance that occurs in the conventional RFpower amplifier 1000Q at turn-on is reduced, and the gate voltage mustbe raised about a volt higher until the peak transconductance value isreached.

FIG. 19A illustrates the transconductance response for a DC inputsignal. FIG. 19B provides identical data as FIG. 19A, except that in thecase used to generate the graph of FIG. 19B both the DC input signal anda small RF signal were applied to the RF power amplifier. As can beseen, the transconductance response curves obtained by linearlyextraction of the small RF signal as shown in FIG. 19B have the sameshape as the transconductance response curves in FIG. 19A. Note that thecurve for RF power amplifier 1000D was omitted in FIG. 19B.

FIG. 20 is a graph that illustrates the gate-to-source capacitance atdevice turn-on for RF power amplifiers 1000H, 1000L and 1000P (each ofwhich include 10 nm recesses 622) as compared to the gate-to-sourcecapacitance at device turn-on for the conventional RF amplifier 1000Q.The graphs shown in FIG. 20 were obtained by linear extraction of the RFsignal. As shown in FIG. 20, all four gate-to-source capacitanceresponse curves exhibit similar shape to the correspondingtransconductance curves illustrated in FIGS. 19A and 19B. Thus, it canbe seen that the threshold voltage engineering also provides a plateauin the gate-to-source capacitance response which results because onlyabout half of the gate periphery turns on at a first level, while theother half turns on at a second, lower level in response to an inputsignal).

Because of intrinsic characteristics of semiconductor materials,including decreasing electron velocity with increasing charge density,RF power amplifiers tend to suffer from gain compression. As discussedabove, soft gain compression refers to the situation where significantgain compression starts to occur at relatively low input power levels.Unlike RF power amplifiers formed in certain other semiconductormaterials, gallium nitride based RF power amplifiers tend to suffer fromsoft gain compression. Due to linearity requirements, many applicationsfor RF power amplifiers require less than 3 dB in “gain compression,”which refers to the acceptable amount of variance in the gain over theoperating range for the amplifier. Other RF power amplifiers have eventighter linearity requirements, requiring, for example, less than 1 dBin gain compression.

FIG. 21 is a graph that illustrates the gain characteristics of RF poweramplifiers 1000E, 1000F, 1000G and 1000H. Thus, the plots included inFIG. 21 correspond to the RF power amplifiers in which 50% of the gateperiphery was formed with recessed gate fingers, at four differentrecess depths (4 nm, 6 nm, 8 nm and 10 nm, respectively). As can be seenfrom FIG. 21, the deeper the recesses 622, the lower the maximum gain ofthe RF power amplifier. Thus, the threshold engineering performed in theRF power amplifiers according to embodiments of the present inventionmay result in a reduction in one of the important performance parametersof the RF power amplifier. FIG. 21 also shows that the smaller therecess depth, the greater the amount of gain compression. For example,when the segments 1016-1, 1016-3 of the gate finger 1016 are onlyrecessed 4 nm into the gallium nitride based barrier layer, 1 dB of gaincompression is reached at an input power level of less than 9 dBm. Whenthe segments 1016-1, 1016-3 of the gate finger 1016 are recessed 6 nminto the gallium nitride based barrier layer, 1 dB of gain compressionis reached at an input power level of about 11 dBm. When the segments1016-1, 1016-3 of the gate finger 1016 are recessed 8 nm into thegallium nitride based barrier layer, 1 dB of gain compression is reachedat an input power level of about 16 dBm. When the segments 1016-1,1016-3 of the gate finger 1016 are recessed the full 10 nm into thegallium nitride based barrier layer, 1 dB of gain compression is reachedat an input power level of about 19 dBm. Moreover, the similarity of thegain response curves for the RF power amplifiers 1000G and 1000Hsuggests that some degree of process variation may be tolerated withoutsignificant impact on device performance. As the RF power amplifierhaving the 10 nm recesses 622 clearly provides the best linearity, thediscussion below will focus on RF power amplifiers that have 10nanometer recesses 622.

FIG. 22 is a graph that illustrates how the percentage of the gateperiphery that is recessed impacts the gain performance of the RF poweramplifiers according to embodiments of the present invention. Inparticular, FIG. 22 shows the gain as a function of RF input power forRF power amplifiers 1000D, 1000H and 1000L. As shown in FIG. 22, RFpower amplifier 1000L, which has 55% of the gate periphery recessed,provides the best linearity, and also provides a slight increase in gainas compared to the RF power amplifier 1000H (which has 50% of the gateperiphery recessed). Based on these results, it is anticipated that, insome cases, the gain performance may be further improved by furtherincreasing the portion of the gate periphery that has recessed gatefingers (or other techniques that are used to modify the thresholdvoltage along a portion of the gate periphery), with percentages of 60%,65% or even 70% of the gate periphery potentially providing furtherimprovements. Preliminary modeling results indicate that in someembodiments that have two different threshold voltage levels, optimumperformance may be obtained if 55%-65% of the gate periphery has thehigher threshold voltage and 35%-45% of the gate periphery has the lowerthreshold voltage. Embodiments of the present invention, however, arenot limited thereto, and it will be appreciated that the optimumpercentages may vary based on application, material system and otherparameters. It will also be appreciated that at a percentage of 100%,the linearity of the gain curve will be significantly worse than what isshown in FIG. 22.

The shape of the gain response for an RF power amplifier changes withchanges in the DC bias condition of the device. Generally speaking, atlow bias current values (e.g., DC drain-to-source currents of less than10 mA/mm for a gallium nitride based HEMT RF power amplifier), the RFpower amplifier will exhibit gain expansion (i.e., increasing gain withincreasing input power level) for a range of lower input power levelsfollowed by deep gain compression behavior (i.e., decreasing gain withincreasing input power level) as the input power is increased further.As the bias current is increased, the gain response becomes flatter atlow input power levels (as opposed to exhibiting gain expansion), and asthe bias current levels are increased even further the RF poweramplifier may exhibit soft gain compression even at very low input powerlevels. RF power amplifiers often have fairly stringent linearityrequirements, such as a variation in gain of less than 1 dB, 2 dB or 3dB. To meet such linearity requirements, conventional RF poweramplifiers would have to be operated in the relatively narrow range ofDC bias current levels that have a flat gain response at lower inputpower levels, as this was the only way to provide sufficiently linearperformance. As a result, other performance parameters such asefficiency, power density and/or the maximum gain of the RF poweramplifier tended to be compromised in order to operate the RF poweramplifier in the bias current level range that was necessary to meet thelinearity requirements.

By, for example, engineering the threshold voltage of the RF poweramplifier so that different regions of the RF power amplifier turn on atdifferent levels, it has been discovered that the flatness of the gainresponse at lower input power levels may be significantly improved overa wide range of bias current levels. Thus, at both low bias currentlevels and at high bias current levels, the magnitude of both gainexpansion and gain compression are significantly reduced. Since goodlinearity may be achieved over a much larger range of bias currentlevels, the need to compromise other performance parameters in order tomeet linearity requirements may be reduced or eliminated.

FIGS. 23A and 23B are graphs that illustrate the gain performance of RFpower amplifier 1000L operated at various bias current conditions ascompared to the gain performance of the conventional RF power amplifier1000Q operated under the same bias current conditions. As shown in FIG.23A, conventional RF power amplifiers having the design of RF poweramplifier 1000Q exhibit different gain responses depending upon the biascurrent level. At low bias current levels (e.g., bias currents of about10 mA/mm or less), the RF power amplifier 1000Q operates under gainexpansion for all input power levels measured. At elevated bias currentlevels (e.g., bias currents of about 25 mA/mm or more), the conventionalRF power amplifier almost immediately starts to experience soft gaincompression. Consequently, for bias current of 50 mA/mm or higher, gaincompression of about 1 dB or more is seen at RF input power levels of 10dBm, and gain compression of about 2 dB or more is seen at RF inputpower levels of 15 dBm.

As shown in FIG. 23B, RF power amplifiers according to embodiments ofthe present invention having the design of RF power amplifier 1000Loperate under gain expansion at low bias current levels (e.g., biascurrents of about 10 mA/mm or less) for all input power levels measured.This is similar behavior to the conventional RF power amplifiers.However, at elevated bias current levels (e.g., bias currents of about25 mA/mm or more), the RF power amplifier 1000L exhibits a much morelinear gain response (i.e., much less soft gain compression).Consequently, for bias currents between 50 mA/mm and 300 mA/mm, gaincompression of less than 0.5 dB or more is seen at RF input power levelsof 10 dBm, and gain compression of less than 1.0 dB is seen at RF inputpower levels of 15 dBm. As a result, the RF amplifier may be operated athigher bias currents and/or at higher input power levels—and henceachieving higher gain and higher output power levels—while stillachieving a desired level of linearity.

FIG. 24 is a graph illustrating the gain performance of an RF poweramplifier according to an embodiment of the present invention (RF poweramplifier 1000L) as compared to a conventional RF power amplifier (REpower amplifier 1000Q).

As shown in FIG. 24, the gain of the RF power amplifier 1000L exhibits aslight decrease with increasing input power level for input power levelsin the range of about 0-3 dBm, and then exhibits a slight increase ingain with increasing input power level for input power levels in therange of about 3-11 dBm. The slight decrease that is seen at low inputpower levels may be due to measurement accuracy, and thus the trueresponse may actually be a monotonically increasing gain response forinput power levels from 0-11 dBm, which is due to gain expansion. Forinput power levels above about 11 dBm, the gain once again decreaseswith increasing input power level, first experiencing soft compressionand then decreasing rapidly at input power levels above about 17-19 dBmas the amplifier enters into the compression region.

FIG. 24 clearly shows that RF power amplifier 1000L exhibits asignificant improvement in gain compression performance as compared toRF power amplifier 1000Q at high bias current levels. In particular,when operated at a higher bias current level, the conventional RE poweramplifier 1000Q reaches a 1 dB gain compression level at an RF inputpower of about 11 dBm. In contrast, when operated at the same elevatedbias current level, RF power amplifier 1000L reaches a 1 dB gaincompression level at an RF input power of about 19 dBm. Thus, the pointwhere the gain is reduced (compressed) 1 dB from the maximum gain ispushed to a much higher input power level than is the case with theconventional RF power amplifier 1000Q. As a result, the RF poweramplifier 1000L may be operated at high bias current levels and at highinput power levels while still providing less than 1 dB gaincompression. It should be noted that the maximum gain of the RF poweramplifier 1000L is reduced as compared to the gain of the conventionalRF power amplifier 1000Q by about 0.7 dB when operated at the higherbias current level. However, since the conventional RF power amplifier1000Q can only operate at input power levels of up to about 11 dBm whileproviding gain compression of 1 dB or less, the RF power amplifier 1000Laccording to embodiments of the present invention may ultimately operateat much higher output power levels as compared to the conventional RFpower amplifier 1000Q.

As can also be seen with reference to FIG. 24, even when operated atdrain to source current level of greater than 50 mA/mm, RF poweramplifier 1000L exhibits gain compression of less than 1 dB for RFsignals having input power levels of between 0.1 dBm and 10 dBm and gaincompression of less than 0.5 dB for RF signals having input power levelsof between 10 dBm and 15 dBm. In contrast, the conventional RF poweramplifier 1000Q, when operated at drain to source current level ofgreater than 50 mA/mm, exhibits gain compression of about 0.5 dB for RFsignals having input power levels of 10 dBm and gain compression of morethan 1.0 dB for RF signals having input power levels of 15 dBm

It will be appreciated that the RF power amplifiers according toembodiments of the present invention may be configured to have theabove-described improved gain response at higher bias current levels bydesigning the amplifier so that different portions of the device willturn on at different levels in response to application of a voltage tothe gate of the transistor amplifier. In particular, the thresholdvoltages of different portions of the device may be engineered to bedifferent. In some embodiments, this may be achieved by forming at leastsome portions of the gate fingers in recesses in a barrier layer of thedevice, while other portions of the gate fingers are not formed inrecesses (and/or are formed in recesses having different depths). Thistechnique may ensure that different portions of the device havedifferent threshold voltages, and hence will turn-on at different levelsin response to an input signal. In other embodiments, some of the gatefingers may be made of different materials and/or portions of thebarrier layer under some portion of the gate fingers may have differentmaterial compositions and/or different doping levels in order to modifythe threshold voltage in selected portions of the device.

FIG. 25 is a graph that illustrates the measured maximum available gainas a function of frequency for RF power amplifiers 1000D, 1000H, 1000L,1000P and 1000Q. As shown in FIG. 25, RF power amplifiers 1000P and1000Q provide the highest gain, but these RF power amplifiers alsoexhibit the worst linearity, as shown in FIG. 22. Somewhatnon-intuitively, RF power amplifier 1000L, which exhibits the bestlinearity of all the samples evaluated, provides slightly improved gainperformance as compared to RF power amplifiers 1000D and 1000H.

The RF power amplifiers according to embodiments of the presentinvention may also exhibit higher efficiency levels as compared toconventional RF power amplifiers. Currently, because of the sharpincrease in the gate-to-source capacitance at device turn-on, it may benecessary to bias the RF power amplifier at a DC drain current levelthat will allow good matching between the RF power amplifier and anassociated input impedance matching network. Unfortunately, the directcurrent drain bias current level that provides a good impedance matchmay be relatively high which may negatively impact the efficiency of theRF power amplifier. Since the RF power amplifiers according toembodiments of the present invention have a less sharp increase in thegate-to-source capacitance at device turn-on, the range of acceptabledirect current bias currents may be increased, allowing for lower directcurrent bias currents (and hence more efficient RF power amplifiers)while also achieving improved linearity. In fact, preliminary resultssuggest that efficiency levels may be increased to about 45% from the25% efficiency levels achieved with state-of-the-art conventional RFpower amplifiers operating under substantially similar tuningconditions.

The threshold voltages at different points along the gate periphery mayvary by at least 0.1 volts in some embodiments. In other embodiments,the threshold voltages at different points along the gate periphery mayvary by at least 0.25 volts. In still other embodiments, the thresholdvoltages at different points along the gate periphery may vary by atleast 0.5 volts, 0.75 volts or even 1.0 volts.

It will also be appreciated that improved performance may be achieved insome embodiments if the percentage of the device that has a firstthreshold voltage is different than the percentage of the device thathas a second, different threshold voltage. For example, in someembodiments, the RF power amplifier may be configured to have a firstportion of the gate periphery that has a first threshold voltage and asecond portion of the gate periphery that has a different, secondthreshold voltage. The first portion may be a first percentage of thegate periphery and the second portion may be a second percentage of thegate periphery, where the second percentage exceeds the first percentageby at least five percentage points. In another embodiment, the firstpercentage may be no more than 45% of the gate periphery and the secondpercentage may be at least 55% of the gate periphery. In someembodiments, the first threshold voltage may be less than the secondthreshold voltage. For example, from FIGS. 19A-19B above, it can be seenthat the threshold voltage for the portions of the gate fingers that arenot recessed is about −3 volts, while the threshold voltage for theportions of the gate fingers that are recessed is about −2 volts. Asdiscussed above, in some embodiments, improved performance may beachieved if the percentage of the gate periphery that has the secondthreshold voltage (here −2 volts) exceeds the percentage of the gateperiphery that has the first threshold voltage (here −3 volts).

It will also be appreciated that the RF power amplifier may beconfigured to have more than two distinct threshold voltages. Forexample, in other embodiments, the RF power amplifier may have threedistinct threshold voltages, four distinct threshold voltages or evenlarger numbers of distinct threshold voltages. As discussed above, thedifferent threshold voltages may be achieved by configuring differentsegments of each gate finger to have different threshold voltages, byconfiguring different gate fingers to have different threshold voltages,or both. In embodiments that have three distinct threshold voltages, thepercentage of the gate periphery that has a first of the three thresholdvoltages may be greater than the percentage of the gate periphery thathas either the second or the third threshold voltage. For example,35-50% of the gate periphery may have the first threshold voltage,25-40% of the gate periphery may have the second threshold voltage, and15-25% of the gate periphery may have the third threshold voltage. Inone specific example, 50% of the gate periphery may have the firstthreshold voltage, 35% of the gate periphery may have the secondthreshold voltage, and 15% of the gate periphery may have the thirdthreshold voltage.

The RF power amplifier may be a gallium nitride based HEMT RF poweramplifier in some embodiments. The HEMT may have, for example, a galliumnitride channel layer, an aluminum gallium nitride barrier layer on thechannel layer, and the gate fingers may be on the aluminum galliumnitride barrier layer opposite the gallium nitride channel layer. Itwill be appreciated that the channel layer and/or the barrier layer mayinclude multiple layers, and that various other layers may also beincluded in the HEMT.

In embodiments where the different threshold voltages are achieved byforming recesses in the barrier layer so that a portion of the gateperiphery is recessed, the thickness of the barrier layer underneathdifferent portions of the gate fingers may vary. In some embodiments,the variation in the thickness of the barrier layer may be at least 5nm. In other embodiments, the variation in the thickness of the barrierlayer may be at least 8 nm deep. In still other embodiments, thevariation in the thickness of the barrier layer may be at least 10 nm orat least 12 nm.

Pursuant to further embodiments of the present invention, methods ofimproving the linearity of an RF power amplifier are provided. The RFpower amplifier may include a plurality of unit cell transistors thatare electrically connected in parallel on a common semiconductorstructure. For example, the RF power amplifier may be a gallium nitridebased HEMT power amplifier. Different portions of the gate periphery ofthe RF power amplifier may be configured to have different thresholdvoltages. As a result, when a common gate signal having an increasingvoltage level is applied to the respective gate fingers of the unit celltransistors, the gate-to-source capacitance of the RF power amplifierincreases to a first level as a first portion of the device turns onwhile at least one other portion remains off. The voltage level of thecommon gate signal that is applied to the respective gate fingers of theunit cell transistors may then be increased further, and thegate-to-source capacitance of the RF power amplifier may remainsubstantially at the first level. The voltage level of the common gatesignal that is applied to the respective gate fingers of the unit celltransistors may then be increased even further, which may result in thegate-to-source capacitance of the RF power amplifier increasing to asecond level that is at least 1.5 times larger than the first level.This may occur as the portions of the gate periphery that have a second,higher threshold voltage turn on.

This effect may be seen with reference to FIG. 20. As shown in FIG. 20,when a common gate signal having an increasing voltage level is appliedto the RF power amplifier, the gate-to-source capacitance of the RFpower amplifier increases rapidly to a first level as a first portion ofthe device turns on while at least one other portion remains off. Then,the rate of increase in the gate-to-source capacitance decreasessignificantly and remains close to the first level as the gate voltageincreases further, as the transistors that have turned on move towardsaturation. Then, as the gate voltage is increased further, thegate-to-source capacitance of the RF power amplifier again increasesrapidly again as a second portion of the device turns on.

It will be appreciated that features of the above-described embodimentsmay be combined in any way to create a plurality of additionalembodiments.

Embodiments of the present invention are described above with referenceto the accompanying drawings. The present invention may, however, beembodied in many different focus and should not be construed as limitedto the embodiments described herein and/or pictured in the drawings.Rather, these embodiments are provided so that this disclosure will bethorough and complete, and will fully convey the scope of the presentinvention to those skilled in the art. Like numbers refer to likeelements throughout.

It will be understood that, although the terms first, second, etc. maybe used herein to describe various elements, these elements should notbe limited by these terms. These terms are only used to distinguish oneelement from another. For example, a first element could be termed asecond element, and, similarly, a second element could be termed a firstelement, without departing from the scope of the present invention. Asused herein, the term “and/or” includes any and all combinations of oneor more of the associated listed items.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of the invention. Asused herein, the singular forms “a,” “an” and “the” are intended toinclude the plural forms as well, unless the context clearly indicatesotherwise. It will be further understood that the terms “comprises”“comprising,” “includes” and/or “including” when used herein, specifythe presence of stated features, integers, steps, operations, elements,and/or components, but do not preclude the presence or addition of oneor more other features, integers, steps, operations, elements,components, and/or groups thereof.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which this invention belongs. It will befurther understood that terms used herein should be interpreted ashaving a meaning that is consistent with their meaning in the context ofthis specification and the relevant art and will not be interpreted inan idealized or overly formal sense unless expressly so defined herein.

It will be understood that when an element such as a layer, region orsubstrate is referred to as being “on” or extending “onto” anotherelement, it can be directly on or extend directly onto the other elementor intervening elements may also be present. In contrast, when anelement is referred to as being “directly on” or extending “directlyonto” another element, there are no intervening elements present. Itwill also be understood that when an element is referred to as being“connected” or “coupled” to another element, it can be directlyconnected or coupled to the other element or intervening elements may bepresent. In contrast, when an element is referred to as being “directlyconnected” or “directly coupled” to another element, there are nointervening elements present.

Relative terms such as “below” or “above” or “upper” or “lower” or“horizontal” or “lateral” or “vertical” may be used herein to describe arelationship of one element, layer or region to another element, layeror region as illustrated in the figures. It will be understood thatthese terms are intended to encompass different orientations of thedevice in addition to the orientation depicted in the figures.

Embodiments of the invention are described herein with reference tocross-section illustrations that are schematic illustrations ofidealized embodiments (and intermediate structures) of the invention.The thickness of layers and regions in the drawings may be exaggeratedfor clarity. Additionally, variations from the shapes of theillustrations as a result, for example, of manufacturing techniquesand/or tolerances, are to be expected. Thus, embodiments of theinvention should not be construed as limited to the particular shapes ofregions illustrated herein but are to include deviations in shapes thatresult, for example, from manufacturing.

In the drawings and specification, there have been disclosed typicalembodiments of the invention and, although specific terms are employed,they are used in a generic and descriptive sense only and not forpurposes of limitation, the scope of the invention being set forth inthe following claims.

1. A radio frequency (“RF”) power amplifier, comprising: a plurality ofunit cell transistors on a common wide bandgap semiconductor structure,the unit cell transistors electrically connected in parallel, and eachunit cell transistor including a respective gate finger; wherein theunit cell transistors are configured so that a third ordertransconductance response of the RF power amplifier includes at leastthree peaks.
 2. The RF power amplifier of claim 1, wherein the unit celltransistors are configured so that a third order transconductanceresponse of the RF power amplifier includes at least two positive peaksand at least one negative peak.
 3. The RF power amplifier of claim 1,wherein the unit cell transistors are configured so that a third ordertransconductance response of the RF power amplifier includes at leastone positive peak and at least two negative peaks.
 4. The RF poweramplifier of claim 1, wherein the unit cell transistors are configuredso that a third order transconductance response of the RF poweramplifier includes at least two positive peaks and at least two negativepeaks.
 5. The RF power amplifier of claim 4, wherein the at least twopositive peaks and at least two negative peaks are all at gate-to-sourcevoltage values that are within two volts of a turn-on gate-to-sourcevoltage of the RF power amplifier.
 6. The RF power amplifier of claim 5,wherein the second positive peak occurs at a higher gate-to-sourcevoltage level than the first positive peak, and the second positive peakhas a higher third order transconductance value than the first positivepeak.
 7. The RF power amplifier of claim 6, wherein the second negativepeak occurs at a higher gate-to-source voltage level than the firstnegative peak, and the second negative peak has a lower third ordertransconductance value than the first negative peak.
 8. (canceled) 9.The RF power amplifier of claim 1, wherein a first portion of the RFpower amplifier has a first threshold voltage and a second portion ofthe RF power amplifier has a second threshold voltage, the first andsecond threshold voltages differing by at least 0.25 volts.
 10. The RFpower amplifier of claim 9, wherein the first portion comprises a firstpercentage of a gate periphery of the RF power amplifier and the secondportion comprises a second percentage of the gate periphery of the RFpower amplifier, and wherein the second percentage exceeds the firstpercentage by at least five percentage points. 11-14. (canceled)
 15. Aradio frequency (“RF”) power amplifier, comprising: a plurality of unitcell transistors on a common semiconductor structure, the unit celltransistors electrically connected in parallel, and each unit celltransistor including a respective gate finger; wherein a gate peripheryof the RF power amplifier includes a first portion and a second portion,and the first portion has a first threshold voltage and the secondportion has a second threshold voltage that differs from the firstthreshold voltage by at least 0.1 volts, and wherein the first portioncomprises a first percentage of the gate periphery and the secondportion comprises a second percentage of the gate periphery that exceedsthe first percentage by at least five (5) percentage points.
 16. The RFpower amplifier of claim 15, wherein the first and second thresholdvoltages differ by at least 0.25 volts.
 17. The RF power amplifier ofclaim 15, wherein the first percentage comprises no more than 45% of thegate periphery and the second percentage comprises at least 55% of thegate periphery. 18-21. (canceled)
 22. A radio frequency (“RF”) poweramplifier, comprising: a plurality of unit cell gallium nitride basedhigh electron mobility transistors on a common semiconductor structure,the unit cell gallium nitride based high electron mobility transistorselectrically connected in parallel; wherein the unit cell galliumnitride based high electron mobility transistors are configured so thatthe RF power amplifier exhibits gain compression of less than 0.5 dB forRF signals having input power levels of between 20 dB and 11 dB back-offfrom the saturation power and gain compression of less than 1.0 dB forRF signals having input power levels of between 11 dB and 6 dB back-offfrom the saturation power, when the RF power amplifier is operated at adrain to source current level of greater than 50 mA/mm for the RFsignals.
 23. The RF power amplifier of claim 22, wherein a first portionof a gate periphery of the RF power amplifier has a first thresholdvoltage and a second portion of the gate periphery of the RF poweramplifier has a second threshold voltage, the first and second thresholdvoltages differing by at least 0.25 volts.
 24. The RF power amplifier ofclaim 23, wherein the first portion comprises a first percentage of thegate periphery and the second portion comprises a second percentage ofthe gate periphery, wherein the second percentage exceeds the firstpercentage by at least five percentage points.
 25. The RF poweramplifier of claim 24, wherein the first percentage comprises no morethan 45% of the gate periphery and the second percentage comprises atleast 55% of the gate periphery.
 26. The RF power amplifier of claim 23,wherein the first threshold voltage is less than the second thresholdvoltage.
 27. The RF power amplifier of claim 26, wherein the unit cellgallium nitride based high electron mobility transistors includerespective gate fingers that are on a top surface of a gallium nitridebased barrier layer that has a first thickness underneath a firstportion of a gate periphery of the RF power amplifier and a secondthickness underneath a second portion of the gate periphery, wherein thefirst and second thicknesses differ by at least 5 nanometers. 28-35.(canceled)
 36. A radio frequency (“RF”) power amplifier, comprising: aplurality of unit cell transistors on a common semiconductor structure,the unit cell transistors electrically connected in parallel, and eachunit cell transistor including a respective gate finger, whereinthreshold voltages for a plurality of gate fingers are different. 37.The RF power amplifier of claim 36, wherein the respective thresholdvoltages of the first and second of the unit cell transistors differ byat least 0.1 volts.
 38. The semiconductor device of claim 37, whereinthe common semiconductor structure includes a gallium nitride basedlayer that acts as a barrier layer for each of the unit celltransistors, wherein a thickness of the gallium nitride based layervaries in different regions of the semiconductor device. 39-44.(canceled)